VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE
First Claim
1. A process for making an insulator in a microelectronic device, the process comprising:
- introducing a first reactant component into a deposition chamber;
introducing a second reactant component into the deposition chamber; and
alternately repeating introducing the first reactant component and the second reactant component into the deposition chamber;
wherein said first reactant component comprises a metal alkylamide;
wherein said second reactant component interacts with the deposited first reactant component to form the insulator; and
wherein said insulator comprises oxygen and the metal from the metal alkylamide.
2 Assignments
0 Petitions
Accused Products
Abstract
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
9 Citations
20 Claims
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1. A process for making an insulator in a microelectronic device, the process comprising:
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introducing a first reactant component into a deposition chamber; introducing a second reactant component into the deposition chamber; and alternately repeating introducing the first reactant component and the second reactant component into the deposition chamber; wherein said first reactant component comprises a metal alkylamide; wherein said second reactant component interacts with the deposited first reactant component to form the insulator; and wherein said insulator comprises oxygen and the metal from the metal alkylamide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A microelectronic device prepared by a process comprising:
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introducing a first reactant component into a deposition chamber; introducing a second reactant component into the deposition chamber; and alternately repeating the introduction of the first reactant component and the second reactant component; wherein said first reactant component comprises a metal alkylamide; wherein said second reactant component interacts with the deposited first reactant component to form the insulator; and wherein said insulator comprises oxygen and the metal from the metal alkylamide. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification