SHIELDED GATE TRENCH MOSFET DEVICE AND FABRICATION
First Claim
Patent Images
1. A semiconductor device, comprising:
- a substrate;
an active gate trench in the substrate, comprising a first top gate electrode and a first bottom source electrode; and
a gate runner trench comprising a second top gate electrode and a second bottom source electrode;
wherein;
the second top gate electrode is narrower than the second bottom source electrode.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.
18 Citations
13 Claims
-
1. A semiconductor device, comprising:
-
a substrate; an active gate trench in the substrate, comprising a first top gate electrode and a first bottom source electrode; and a gate runner trench comprising a second top gate electrode and a second bottom source electrode;
wherein;the second top gate electrode is narrower than the second bottom source electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
Specification