INTEGRATION OF SUPERJUNCTION MOSFET AND DIODE
First Claim
1. A semiconductor structure, comprising:
- a semiconductor layer of a first conductivity type;
trenches extending into the semiconductor layer; and
a conductive layer of a second conductivity type lining sidewalls and bottom of each trench and forming PN junctions with the semiconductor layer, wherein a first plurality of the trenches are disposed in a field effect transistor (FET) region of the semiconductor structure, the FET region comprising;
a body region of the first conductivity type in the semiconductor layer;
source regions of the second conductivity type in the body region; and
gate electrodes isolated from the body region and the source regions by a gate dielectric;
wherein a second plurality of the trenches are disposed in a Schottky region of the semiconductor structure, the Schottky region comprising;
a conductive material contacting mesa surfaces of the semiconductor layer between adjacent ones of the second plurality of the trenches to form Schottky contacts, the conductive material also contacting the conductive layer proximate an upper portion of the second plurality of the trenches.
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Accused Products
Abstract
A semiconductor structure comprises a semiconductor layer of a first conductivity type, trenches extending into the semiconductor layer, and a conductive layer of a second conductivity type lining sidewalls and bottom of each trench and forming PN junctions with the semiconductor layer. A first plurality of the trenches are disposed in a field effect transistor region that comprises a body region of the first conductivity type, source regions of the second conductivity type in the body region, and gate electrodes isolated from the body region and the source regions by a gate dielectric. A second plurality of the trenches are disposed in a Schottky region that comprises a conductive material contacting mesa surfaces of the semiconductor layer between adjacent ones of the second plurality of the trenches to form Schottky contacts. The conductive material also contacts the conductive layer proximate an upper portion of the second plurality of the trenches.
24 Citations
28 Claims
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1. A semiconductor structure, comprising:
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a semiconductor layer of a first conductivity type; trenches extending into the semiconductor layer; and a conductive layer of a second conductivity type lining sidewalls and bottom of each trench and forming PN junctions with the semiconductor layer, wherein a first plurality of the trenches are disposed in a field effect transistor (FET) region of the semiconductor structure, the FET region comprising; a body region of the first conductivity type in the semiconductor layer; source regions of the second conductivity type in the body region; and gate electrodes isolated from the body region and the source regions by a gate dielectric; wherein a second plurality of the trenches are disposed in a Schottky region of the semiconductor structure, the Schottky region comprising; a conductive material contacting mesa surfaces of the semiconductor layer between adjacent ones of the second plurality of the trenches to form Schottky contacts, the conductive material also contacting the conductive layer proximate an upper portion of the second plurality of the trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor structure, comprising:
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a field effect transistor (FET) region comprising; a body region of a first conductivity type in a semiconductor region; source regions of a second conductivity type in the body region; gate electrodes isolated from the body region and the source regions by a gate dielectric; and a conductive material extending over the FET region and contacting the source regions; a Schottky region comprising; a first plurality of trenches extending into the semiconductor region; and a conductive layer of the second conductivity type lining sidewalls and bottom of each of the first plurality of trenches and forming PN junctions with the semiconductor region, wherein the conductive material extends over the Schottky region and contacts mesa surfaces of the semiconductor region between adjacent ones of the first plurality of trenches and contacts the conductive layer proximate an upper portion of the first plurality of trenches. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a semiconductor structure having a field effect transistor (FET) region and a Schottky region, the method comprising:
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forming trenches extending into a semiconductor region; forming a conductive layer lining sidewalls and bottom of each trench, the conductive layer forming PN junctions with the semiconductor region; in the FET region, forming a body region of a first conductivity type in the semiconductor region, source regions of a second conductivity type in the body region, and forming gate electrodes isolated from the body region and the source regions by a gate dielectric; and in the Schottky region, forming a conductive material contacting mesa surfaces of the semiconductor region between adjacent ones of the trenches to form Schottky contacts and contacting the conductive layer proximate an upper portion of the trenches. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification