NONVOLATILE MEMORY DEVICE AND DRIVING METHOD THEREOF
First Claim
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1. A nonvolatile memory device, comprising:
- a plurality of strings having a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the plurality of serially-connected selection transistors; and
control logic configured to perform a program operation for setting a threshold voltage of at least one of the plurality of serially-connected selection transistors.
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Abstract
According to example embodiments, a nonvolatile memory device includes a plurality of strings having a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the serially-connected selection transistors. A control logic is configured to perform a program operation for setting a threshold voltage of at least one of the serially-connected selection transistors.
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Citations
20 Claims
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1. A nonvolatile memory device, comprising:
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a plurality of strings having a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the plurality of serially-connected selection transistors; and control logic configured to perform a program operation for setting a threshold voltage of at least one of the plurality of serially-connected selection transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A nonvolatile memory device, comprising:
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a plurality of memory cells connected in series; a first selection transistor connected to one end of the memory cells and programmed to have a first threshold voltage; a second selection transistor connected to the first selection transistor and programmed to have a second threshold voltage; and a third selection transistor connected to the second selection transistor and programmed to have a third threshold voltage, wherein the first threshold voltage is higher than the second and third threshold voltages. - View Dependent Claims (15)
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16. A nonvolatile memory device comprising:
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a plurality of bit lines; a common source line; a plurality of strings between the common source line and the plurality of bit lines, each of the plurality of strings including, a plurality of selection transistors, the plurality of selection transistor including a ground selection transistor connected to the common source line and at least one string selection transistor connected to one of the plurality of bit lines, and a plurality of memory cells serially-connected between the ground selection transistor and the at least one string selection transistor; and a control logic connected to the plurality of strings, the control logic being configured to perform a program operation for setting a threshold voltage of at least one of the plurality of selection transistors. - View Dependent Claims (17, 18, 19, 20)
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Specification