Methods for Semiconductor Regrowth
First Claim
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1. A method comprising:
- performing a treatment on a surface of a first semiconductor region, wherein the treatment is performed using process gases comprising;
an oxygen-containing gas; and
an etching gas capable of etching the first semiconductor region; and
performing an epitaxy to grow a second semiconductor region on the surface of the first semiconductor region.
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Abstract
A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
18 Citations
20 Claims
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1. A method comprising:
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performing a treatment on a surface of a first semiconductor region, wherein the treatment is performed using process gases comprising; an oxygen-containing gas; and an etching gas capable of etching the first semiconductor region; and performing an epitaxy to grow a second semiconductor region on the surface of the first semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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etching a semiconductor substrate to form a recess, wherein the semiconductor substrate comprises a top surface in the recess; performing a treatment on the top surface, wherein the treatment is performed using process gases comprising; an oxygen-containing gas; and an etching gas capable of etching the semiconductor substrate; after the treatment, performing a cleaning on the top surface; and after the treatment, performing an epitaxy to grow a semiconductor region in the recess. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method comprising:
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forming Shallow Trench Isolation (STI) regions extending from a top surface of a silicon substrate into the silicon substrate; etching a portion of the silicon substrate between opposite sidewalls of the STI regions to form a recess, wherein the silicon substrate comprises a top surface in the recess; performing a treatment on the top surface, wherein the treatment is performed using process gases comprising CF4 and O2; after the treatment, performing a cleaning on the top surface of the silicon substrate; and performing an epitaxy to grow a germanium-containing semiconductor region in the recess, wherein the germanium-containing semiconductor region is grown from the top surface in the recess. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification