THIN FILM TRANSISTOR ARRAY BASEPLATE
First Claim
1. A thin film transistor (TFT) array substrate comprising:
- a base substrate and a thin film transistor functioning as a switching element, the thin film transistor comprising a gate electrode, a semiconductor layer, a semiconductor protective layer, a source electrode and a drain electrode,wherein the semiconductor protective layer is disposed adjacent to the semiconductor layer and comprises a composite lamination structure, which comprises a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer while contacting the semiconductor layer and an insulating layer formed of an insulating material to be etched more easily.
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Abstract
An embodiment of the present invention provides a TFT array substrate comprising: a base substrate (1) and thin film transistors. The thin film transistor comprises a gate electrode (2), a semiconductor layer (5), a semiconductor protective layer, a source electrode (8) and a drain electrode (9). The semiconductor protective layer is disposed adjacent to the semiconductor layer (5) and comprises a composite lamination structure, which comprises a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer (5) and an insulating layer formed of an insulating material to be etched more easily.
61 Citations
18 Claims
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1. A thin film transistor (TFT) array substrate comprising:
- a base substrate and a thin film transistor functioning as a switching element, the thin film transistor comprising a gate electrode, a semiconductor layer, a semiconductor protective layer, a source electrode and a drain electrode,
wherein the semiconductor protective layer is disposed adjacent to the semiconductor layer and comprises a composite lamination structure, which comprises a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer while contacting the semiconductor layer and an insulating layer formed of an insulating material to be etched more easily. - View Dependent Claims (2, 3, 4, 5, 6, 10, 11, 12, 13, 14, 15, 16, 18)
- a base substrate and a thin film transistor functioning as a switching element, the thin film transistor comprising a gate electrode, a semiconductor layer, a semiconductor protective layer, a source electrode and a drain electrode,
- 7. The TFT array substrate according to claim 7, wherein the semiconductor protective layer comprises a buffer insulating composite lamination structure located between the base substrate and the semiconductor layer and adjacent to a lower side of the semiconductor layer, and the buffer insulating composite lamination structure comprises a buffer insulating protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer while contacting the semiconductor layer and an buffer insulating layer formed of an insulating material to be etched more easily.
Specification