PATTERN FORMATION METHOD

• US 20130344698A1
• Filed: 03/04/2013
• Published: 12/26/2013
• Est. Priority Date: 06/25/2012
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: OCHIAI, Shunsuke, HAYASHI, Hisataka, KASAHARA, Yusuke
• Application Number:
  US13/784,232
• Publication Number:
  US 20130344698A1
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: H01L 21/302 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

According to one embodiment, a mask layer is formed on a film to be processed. A resist film containing a desired pattern is formed on the mask layer. Etching is performed on the above mentioned mask layer with an etching gas that does not contain fluorine. The method also includes removing the resist film. After the resist film is removed, using the mask layer as a mask, an etching is performed on the to be processed film using a fluorocarbon gas.

Claims

1. A pattern formation method, comprising:

depositing a first film on a substrate;

forming a second film on the first film;

forming a resist film having a desired pattern on the second film;

etching the second film with an etching gas that does not contain fluorine using the resist film as a mask;

removing the resist film; and

etching the first film with a fluorocarbon gas using the second film as a mask, after the resist film is removed.

2. The pattern formation method of claim 1, wherein the second film comprises an anti-reflection film.

3. The pattern formation method of claim 2, wherein the anti-reflection film comprises a polyester.

4. The pattern formation method of claim 2, wherein removal of the resist film comprises exposing the resist film to cyclohexanone.

5. The pattern formation method of claim 1, wherein the fluorocarbon gas includes C₅HF₇.

6. The pattern formation method of claim 5, wherein the second film comprises an anti-reflection film.

7. The pattern formation method of claim 6, wherein the anti-reflection film comprises a polyester.

8. The pattern formation method of claim 5, wherein removal of the resist film comprises exposing the resist film to cyclohexanone.

9. A pattern formation method comprising:

forming a mask layer on a film to be processed;

forming a resist film having a desired pattern on the mask layer;

etching the mask layer with an etching gas that does not contain fluorine using the resist film as a mask;

removing the resist film; and

etching the film to be processed with a fluorocarbon gas using the mask layer as a mask, after the resist film is removed.

10. The pattern formation method of claim 9, wherein the mask layer comprises an anti-reflection film.

11. The pattern formation method of claim 10, wherein removal of the resist film comprises exposing the resist film to cyclohexanone.

12. The pattern formation method of claim 10, wherein the anti-reflection film comprises a polyester.

13. The pattern formation method of claim 12, wherein removal of the resist film comprises exposing the resist film to cyclohexanone.

14. The pattern formation method of claim 9, wherein the fluorocarbon gas includes C₅HF₇.

15. The pattern formation method of claim 14, wherein removal of the resist film comprises exposing the resist film to cyclohexanone.

16. The pattern formation method of claim 14, wherein the mask layer comprises an anti-reflection film.

17. The pattern formation method of claim 16, wherein the anti-reflection film comprises a polyester.

18. A pattern formation method, comprising:

forming a film to be processed on a substrate;

forming a mask layer on the film to be processed;

forming a resist film having a desired pattern on the mask layer;

etching the mask layer with an etching gas that does not contain fluorine using the resist film as a mask;

removing the resist film; and

forming features in the film to be processed using the mask layer as a mask by etching the film to be processed with a fluorocarbon gas after the resist film is removed.

19. The pattern formation method of claim 18, wherein removal of the resist film comprises exposing the resist film to cyclohexanone.

20. The pattern formation method of claim 18, wherein the mask layer comprises an anti-reflection film.