TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS
First Claim
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1. A semiconductor device comprising:
- a trench extending into a semiconductor region, the trench having a gate electrode and a shield electrode disposed therein;
a mesa adjacent to the trench; and
a gate runner disposed over the trench and making electrical contact with the gate electrode, and electrically isolated from mesa.
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Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
4 Citations
1 Claim
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1. A semiconductor device comprising:
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a trench extending into a semiconductor region, the trench having a gate electrode and a shield electrode disposed therein; a mesa adjacent to the trench; and a gate runner disposed over the trench and making electrical contact with the gate electrode, and electrically isolated from mesa.
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Specification