SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate having a device region and a mark formation region;
an interlayer insulation film on the semiconductor substrate;
a plug made of a first metal material in the interlayer insulation film on the device region of the semiconductor substrate;
a first mark made of the first metal material in the interlayer insulation film on the mark formation region of the semiconductor substrate;
a second mark made of a second metal material in the interlayer insulation film on the mark formation region of the semiconductor substrate and that has a concave on a surface thereof; and
an upper wiring formed on the interlayer insulation film and electrically connected to the plug.
1 Assignment
0 Petitions
Accused Products
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate, an interlayer insulation film, a plug, a first mark, a second mark, and an upper wiring. The substrate has a device region and a mark formation region. The interlayer insulation film is formed on the substrate. The plug is made of a first metal material in the interlayer insulation film on the device region of the substrate. The first mark is made of the first metal material in the interlayer insulation film on the mark formation region of the substrate. The second mark is made of a second metal material in the interlayer insulation film on the mark formation region of the substrate. The second mark has a concave on a surface thereof. The upper wiring is formed on the interlayer insulation film and is electrically connected to the plug.
12 Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having a device region and a mark formation region; an interlayer insulation film on the semiconductor substrate; a plug made of a first metal material in the interlayer insulation film on the device region of the semiconductor substrate; a first mark made of the first metal material in the interlayer insulation film on the mark formation region of the semiconductor substrate; a second mark made of a second metal material in the interlayer insulation film on the mark formation region of the semiconductor substrate and that has a concave on a surface thereof; and an upper wiring formed on the interlayer insulation film and electrically connected to the plug. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A manufacturing method of a semiconductor device, the method comprising:
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forming an interlayer insulation film on a semiconductor substrate having a lower wiring; forming a plug electrically connected to the lower wiring by embedding a first metal material into the interlayer insulation film on a device region of the semiconductor substrate and forming a first mask by embedding the first metal material into the interlayer insulation film on a mark formation region of the semiconductor substrate; forming a second mark that is made of a second metal material and has a concave on a surface thereof at a predetermined position of the interlayer insulation film on the mark formation region of the semiconductor substrate using the first mark as a reference; and forming an upper wiring electrically connected to the plug using the second mark as a reference. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification