SEMICONDUCTOR MANUFACTURING EQUIPMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20150255317A1
• Filed: 08/21/2014
• Published: 09/10/2015
• Est. Priority Date: 03/05/2014
• Status: Abandoned Application

• Current Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: SUGURO, KYOICHI, Miyashita, Naoto
• Application Number:
  US14/465,247
• Publication Number:
  US 20150255317A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02447 Silicon carbide
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H05B 6/645 using temperature sensors
• CPC Class Codes: H05B 6/707 using waveguides
• CPC Class Codes: H05B 6/80 Apparatus for specific applications stoves or ranges F24C7/02

Abstract

A semiconductor manufacturing equipment according to an embodiment includes a support unit, a chamber, a microwave generator, a waveguide, and an auxiliary heating unit. The support unit supports a wafer. The chamber accommodates the support unit therein. The microwave generator generates a microwave. The waveguide is mounted on the chamber to irradiate the microwave to a surface of the wafer. The auxiliary heating unit heats the wafer by an electromagnetic wave with a wavelength shorter than a wavelength of the microwave.

Claims

1. A semiconductor manufacturing equipment comprising:

a support unit supporting a wafer;

a chamber accommodating the support unit therein;

a microwave generator generating a microwave;

a waveguide mounted on the chamber to irradiate the microwave to a front surface or a back surface of the wafer; and

an auxiliary heating unit heating the wafer by an electromagnetic wave with a wavelength shorter than a wavelength of the microwave.

2. The equipment of claim 1, wherein the auxiliary heating unit is any one of a hot plate, a halogen lamp, an arc lamp, and a laser device.

3. The equipment of claim 1, wherein the waveguide irradiates the microwave in a direction that is not vertical to the front surface or the back surface of the wafer.

4. The equipment of claim 1, wherein an inner wall of the chamber is coated with a non-metallic material.

5. The equipment of claim 1, wherein a frequency of the microwave is equal to or higher than 2.45 GHz and equal to or less than 30 GHz.

6. The equipment of claim 1, wherein a frequency of the microwave is equal to or higher than 5.8 GHz and equal to or less than 14 GHz.

7. The equipment of claim 1, wherein a wavelength of the electromagnetic wave is equal to or higher than 100 μ

m and equal to or less than 1 m.

8. The equipment of claim 1, wherein the electromagnetic wave is any one of far-infrared light, infrared light, visible light, and ultraviolet light.

9. The equipment of claim 1, wherein a plurality of the waveguides are mounted on the chamber.

10. The equipment of claim 4, wherein the non-metallic material is an insulating material or a low conductive material.

11. The equipment of claim 4, wherein the non-metallic material is silica or polyimide.

12. The equipment of claim 1, further comprising a cooler supplying inert gas to the chamber.

13. The equipment of claim 12, wherein the inert gas is any one of Ar, Ne, He, Xe, or N₂.

14. The equipment of claim 1, further comprising a thermometer measuring a temperature of the wafer supported by the support unit.

15. The equipment of claim 14, wherein the thermometer is a radiation thermometer.

16. A manufacturing method of a semiconductor device comprising:

installing a wafer on a support unit in a chamber; and

heating the wafer by irradiating a microwave from a waveguide mounted on the chamber to a front surface or a back surface of the wafer, the microwave is generated by a microwave generator, and irradiating an electromagnetic wave with a wavelength shorter than a wavelength of the microwave from an auxiliary heating unit to the wafer.

17. The method of claim 16, wherein the wafer is heated to a temperature of equal to or higher than 700°

C. with the microwave and the electromagnetic wave.

18. The method of claim 16, wherein after the wafer is heated with the microwave and the electromagnetic wave, output of the electromagnetic wave is reduced and irradiation of the microwave is continued.

19. The method of claim 16, wherein the auxiliary heating unit is any one of a hot plate, a halogen lamp, an arc lamp, and a laser device.

20. A manufacturing method of a semiconductor device comprising:

installing a wafer in a chamber; and

irradiating an electromagnetic wave with a wavelength shorter than a wavelength of a microwave, the electromagnetic wave is generated by a first heating unit provided in the chamber, and then irradiating the microwave to a front surface of the wafer, the microwave is generated by a second heating unit.