FACETED, GERMANIUM SLOTTED WAVEGUIDE

• US 20150277045A1
• Filed: 06/09/2015
• Published: 10/01/2015
• Est. Priority Date: 10/07/2011
• Status: Active Grant

• Current Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Original Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Inventors: KAMOCSAI, Robert L., VU, Vu A.
• Granted Patent: US 9,316,790 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/131 by using epitaxial growth epitaxial growth for semiconductors H01L21/02365

Abstract

A waveguide having a substrate, a first germanium sidewall and a second germanium sidewall. The waveguide is formed by growing the first germanium sidewall and second germanium sidewall on the substrate.

Claims

1. A method for manufacturing a waveguide, the waveguide including a substrate, said method comprising the steps of:

growing a first quantity of germanium to form a first sidewall and growing a second quantity of germanium to form a second sidewall.

2. The method of claim 1 further comprising the step of growing a protective layer on the substrate, wherein the first sidewall, the second sidewall, and the protective layer define the waveguide.

3. The method of claim 2 further comprising the step of removing a quantity of the protective layer from the substrate wherein an area of the substrate located between the first sidewall and the second sidewall is exposed.