Faceted, germanium slotted waveguide

• US 9,316,790 B2
• Filed: 06/09/2015
• Issued: 04/19/2016
• Est. Priority Date: 10/07/2011
• Status: Expired due to Fees

• Current Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Original Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Inventors: Kamocsai, Robert L., Vu, Vu A.
• Primary Examiner(s): Kianni, Kaveh C
• Application Number:
  US14/734,666
• Publication Number:
  US 20150277045A1
• Time in Patent Office: 315 Days
• Field of Search: 385/14
• US Class Current: 1/1
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/131 by using epitaxial growth epitaxial growth for semiconductors H01L21/02365

Abstract

A waveguide having a substrate, a first germanium sidewall and a second germanium sidewall. The waveguide is formed by growing the first germanium sidewall and second germanium sidewall on the substrate.

Claims

1. A method for manufacturing a waveguide, comprising:

providing a substrate;

depositing a protective layer onto the substrate;

removing a portion of the protective layer from the substrate to expose a plurality of areas on the surface of the substrate;

growing a first quality of germanium in a first area on the surface of the substrate to form a first sidewall having a uniform slope; and

growing a second quality of germanium in a second area on the surface of the substrate to form a second sidewall having a uniform slope, wherein the first sidewall, the second sidewall, and the top of the protective layer define the waveguide.

2. The method of claim 1, wherein the waveguide comprises a plurality of slots with trapezoidal sections.

3. The method of claim 1, wherein the protective layer comprises an oxide.

4. The method of claim 1, wherein the substrate comprises silicon.

5. The method of claim 1, wherein the substrate of the sidewall is smooth.

6. The method of claim 1, wherein the waveguides have a uniform depth.

7. The method of claim 1, wherein the step of growing germanium comprises growing crystal line germanium.

8. The method of claim 1, further comprising forming an intrinsic germanium seed layer.

9. The method of claim 1, further comprising forming a doped germanium seed layer.