METHOD FOR PRODUCING STACKED ELECTRODE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE

• US 20160027935A1
• Filed: 10/05/2015
• Published: 01/28/2016
• Est. Priority Date: 03/30/2012
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Naito, Katsuyuki, Tsutsumi, Eishi, Yoshinaga, Norihiro, Akasaka, Yoshihiro
• Granted Patent: US 10,483,104 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 29/413 Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires nanosized carbon materials, e.g. carbon nanotubes, per se C01B32/15; transparent electrodes comprising carbon nano-tubes H10K30/821, nanotechnology per se B82B
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: H10K 30/82 Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• CPC Class Codes: H10K 85/20 Carbon compounds, e.g. carbon nanotubes or fullerenes
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 977/755 Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less

Abstract

A method for producing a stacked electrode of an embodiment includes preparing a multi-layered graphene film, applying a dispersion liquid of metal nanowires onto the multi-layered graphene film, and removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film.

Claims

1. A method for producing a stacked electrode, comprising:

preparing a multi-layered graphene film;

applying a dispersion liquid of metal nanowires onto the multi-layered graphene film; and

removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film.

2. The method according to claim 1, further comprising:

applying a polymer solution onto the multi-layered graphene film having the metal wiring formed; and

removing a solvent from the polymer solution to prepare a polymer layer.

3. The method according to claim 2, wherein

the preparing of a multi-layered graphene film includes preparing the multi-layered graphene film on a substrate, and

after the removing of a solvent from the polymer solution to prepare a polymer layer, the method further includes peeling and removing a laminate including the multi-layered graphene film, the metal wiring, and the polymer layer from the substrate.

4. The method according to claim 1, further comprising pressing the metal wiring after the removing of a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film.

5. The method according to claim 1, wherein an average diameter of the metal nanowires is 20 nm to 200 nm.

6. The method according to claim 1, wherein the metal nanowires contain silver, gold, or copper.

7. The method according to any one of claim 1, wherein a thickness of the multi-layered graphene film is 5 nm or less.

8. The method according to claim 1, wherein the preparing of a multi-layered graphene film includes partially substituting the carbon atoms of the multi-layered graphene film by nitrogen or boron.

9. The method according to claim 1, wherein the preparing of a multi-layered graphene film includes applying a graphene oxide and reducing the graphene oxide to prepare the multi-layered graphene film.

10. The method according to claim 1, wherein the preparing of a multi-layered graphene film includes transferring a graphene formed by a CVD process to prepare the multi-layered graphene film.

11. The method according to claim 2, wherein a polymer included in the polymer layer is a conductive polymer.

12. The method to claim 2, wherein a polymer included in the polymer layer contains a graphene oxide.

13. The method according to claim 2, wherein a polymer included in the polymer layer is a near-infrared transmission polymer.

14. A method for producing a photoelectric conversion device including, as constituents, a stacked electrode, a counter electrode facing the stacked electrode, and a photoelectric conversion layer interposed between the stacked electrode and the counter electrode, wherein

a method for producing the stacked electrode is the method for producing a stacked electrode comprising:

preparing a multi-layered graphene film;

applying a dispersion liquid of metal nanowires onto the multi-layered graphene film; and

removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film.

15. The method according to claim 14, wherein the photoelectric conversion layer is produced by coating.

16. The method according to claim 14, wherein the stacked electrode is pasted to the upper portion of the photoelectric conversion layer by a dry lamination.

17. The method according to claim 14, wherein the photoelectric conversion layer is prepared on the stacked electrode.

18. The method according to claim 14, wherein the counter electrode is an electrode obtained by stacking an ITO and a silver alloy.

19. The method according to claim 14, wherein the counter electrode is a metal foil.