SEMICONDUCTOR MEMORY DEVICE
First Claim
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1. A semiconductor memory device comprising:
- a first memory cell;
a second memory cell adjacent to the first memory cell;
a first word line coupled to the first memory cell; and
a second word line coupled to the second memory cell,wherein when data is read from the first memory cell,a first voltage and a second voltage different from the first voltage are applied to the first word line, anda voltage applied to the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage applied to the second word line changes a second number of times different from the first number of times while the second voltage is applied to the first word line.
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Abstract
According to one embodiment, a semiconductor memory device includes: a first memory cell; a second memory cell; a first word line coupled to the first memory cell; and a second word line coupled to the second memory cell. When data is read from the first memory cell, a first voltage and a second voltage is applied to the first word line. A voltage of the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage changes a second number of times different from the first number of times while the second voltage is applied to the first word line.
15 Citations
20 Claims
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1. A semiconductor memory device comprising:
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a first memory cell; a second memory cell adjacent to the first memory cell; a first word line coupled to the first memory cell; and a second word line coupled to the second memory cell, wherein when data is read from the first memory cell, a first voltage and a second voltage different from the first voltage are applied to the first word line, and a voltage applied to the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage applied to the second word line changes a second number of times different from the first number of times while the second voltage is applied to the first word line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor memory device comprising:
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a first memory cell; a second memory cell coupled to the first memory cell; a first word line coupled to the first memory cell; and a second word line coupled to the second memory cell, wherein in a program-verification operation of the first memory cell, a voltage applied to the first word line changes a first number of times, and a voltage applied to the second word line changes a second number of times. - View Dependent Claims (18, 19, 20)
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Specification