Semiconductor memory device
First Claim
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1. A semiconductor memory device comprising:
- a first memory cell;
a second memory cell adjacent to the first memory cell;
a first word line coupled to the first memory cell; and
a second word line coupled to the second memory cell,wherein when data is read from the first memory cell,a first voltage and a second voltage different from the first voltage are applied to the first word line,a voltage applied to the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage applied to the second word line changes a second number of times different from the first number of times while the second voltage is applied to the first word line,the first voltage is lower than the second voltage, andthe first voltage of times is larger than the second number of times.
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Abstract
According to one embodiment, a semiconductor memory device includes: a first memory cell; a second memory cell; a first word line coupled to the first memory cell; and a second word line coupled to the second memory cell. When data is read from the first memory cell, a first voltage and a second voltage is applied to the first word line. A voltage of the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage changes a second number of times different from the first number of times while the second voltage is applied to the first word line.
20 Citations
20 Claims
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1. A semiconductor memory device comprising:
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a first memory cell; a second memory cell adjacent to the first memory cell; a first word line coupled to the first memory cell; and a second word line coupled to the second memory cell, wherein when data is read from the first memory cell, a first voltage and a second voltage different from the first voltage are applied to the first word line, a voltage applied to the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage applied to the second word line changes a second number of times different from the first number of times while the second voltage is applied to the first word line, the first voltage is lower than the second voltage, and the first voltage of times is larger than the second number of times. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 19, 20)
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15. A semiconductor memory device comprising:
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a first memory cell; a second memory cell coupled to the first memory cell; a first word line coupled to the first memory cell; and a second word line coupled to the second memory cell, wherein in a program-verification operation of the first memory cell, a voltage applied to the first word line changes a first number of times, and a voltage applied to the second word line changes a second number of times. - View Dependent Claims (16, 17, 18)
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Specification