Thin-Film Transistor and Manufacturing Method Thereof, Array Substrate and Manufacturing Method Thereof, and Display Apparatus
First Claim
1. A method for manufacturing a thin-film transistor (TFT), comprising:
- forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate, in which forming of the metal oxide semiconductor active layer includes;
forming the metal oxide semiconductor active layer by electrochemical reaction.
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Abstract
A thin-film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer.
4 Citations
20 Claims
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1. A method for manufacturing a thin-film transistor (TFT), comprising:
- forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate, in which forming of the metal oxide semiconductor active layer includes;
forming the metal oxide semiconductor active layer by electrochemical reaction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 15, 17, 19, 20)
- forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate, in which forming of the metal oxide semiconductor active layer includes;
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12. A thin-film transistor (TFT), comprising a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode, wherein
the metal oxide semiconductor active layer is formed by electrochemical reaction.
Specification