Semiconductor Device and Method for Fabricating the Same
First Claim
1. A method for fabricating a semiconductor device, the method comprising:
- forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate;
removing the dummy mask pattern; and
etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench;
wherein the second trench contacts the fin-type pattern and comprises a smooth pattern which is convex and is positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the smooth pattern and the bottom surface of the second trench.
1 Assignment
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Accused Products
Abstract
A method of fabricating a semiconductor device includes forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate, removing the dummy mask pattern and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench. The second trench contacting the fin-type pattern comprises a smooth pattern which is convex and positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the convex portion and the bottom surface of the second trench.
10 Citations
50 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate; removing the dummy mask pattern; and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench; wherein the second trench contacts the fin-type pattern and comprises a smooth pattern which is convex and is positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the smooth pattern and the bottom surface of the second trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 10, 11, 15)
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8-9. -9. (canceled)
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12-14. -14. (canceled)
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16. A method for fabricating a semiconductor device, the method comprising:
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forming a mask pattern having a predetermined pitch on a substrate, wherein the mask pattern comprises a real mask pattern and a dummy mask pattern; removing the dummy mask pattern to form a pre-second trench and a sharp pattern protruding between a pre-deep trench and the real mask pattern; and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench formed by increasing a depth of the pre-second trench, and a smooth pattern formed by increasing a smoothness of a surface of the sharp pattern. - View Dependent Claims (17, 18, 19, 20, 21, 23)
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22. (canceled)
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24-42. -42. (canceled)
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43. A method of fabricating a semiconductor device, the method comprising:
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forming mask patterns on a substrate; performing an etch process comprising; selectively removing at least one of the mask patterns to define a preliminary trench in the substrate adjacent remaining ones of the mask patterns without removing the substrate therebetween, wherein edges of the preliminary trench define sharp patterns; and etching the substrate between the remaining ones of the mask patterns to define fin-type patterns protruding from the substrate and a shallow trench therebetween, wherein the etching dulls the sharp patterns and increases a depth of the preliminary trench to define a deep trench in the substrate adjacent one of the fin-type patterns; and responsive to performing the etch process, forming device isolating patterns in the shallow trench and in the deep trench. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50)
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Specification