HYBRID MULTILAYER DEVICE

• US 20170213729A1
• Filed: 07/30/2014
• Published: 07/27/2017
• Est. Priority Date: 07/30/2014
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: LIANG, Di
• Granted Patent: US 10,366,883 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02387 Group 13/15 materials
• CPC Class Codes: H01L 21/02636 Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/764 Air gaps H01L21/76264 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/102 characterised by only one potential barrier
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 2304/00 Special growth methods for semiconductor lasers
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/323 in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Abstract

A multilayer device includes a substrate and a first layer disposed on the substrate. A trench extends through one or both of the substrate and the first layer. The trench has a first sidewall spaced apart from a second sidewall, each sidewall extending from an upper surface of the substrate to a lower surface of the first layer. An optically active region is disposed on the first layer overlying the trench, such that at least a portion of the optically active region is located within a set of lines corresponding to the sidewalls of the trench.

Claims

1. A multilayer device, comprising:

a substrate;

a first layer disposed on the substrate;

a trench extending longitudinally through at least one of the substrate and the first layer, the trench having a first sidewall spaced apart from a second sidewall, each sidewall extending from a given surface of the substrate to another surface of the first layer that is spaced apart from the given surface by the first and second sidewalls; and

an active region disposed on the first layer overlying the trench, wherein at least a portion of the active region resides substantially within a boundary defined by the first and second sidewalls of the trench.

2. The device of claim 1, wherein the substrate comprises silicon.

3. The device of claim 1, wherein the first layer comprises a III-V compound semiconductor material.

4. The device of claim 1, wherein the sidewalls of the trench extend from a surface within the substrate and terminate in an adjacent surface of the first layer, such that the trench resides completely within the substrate bounded by the adjacent surface of the first layer.

5. The device of claim 1, wherein a portion of the trench is contained in the substrate and another portion of the trench is contained in the first layer.

6. The device of claim 1, wherein the multilayer device comprises one of a laser, a photodetector, a photointerconnect, a modulator, and a passive waveguide.

7. A method of fabricating a multilayer device, comprising:

providing a substrate;

bonding a structure comprising at least a first layer to the substrate;

forming a trench in at least one of the substrate and the first layer prior to the bonding, the trench including sidewalls spaced apart from each other to define a width thereof, the sidewalls extending between surfaces of the substrate and the first layer to define a height, wherein the width is greater than the height; and

forming one or more layered materials on the first layer to provide an optically active region that is located overlying the trench, wherein at least a portion of the active region resides substantially within boundaries defined by the sidewalls of the trench.

8. The method of claim 7, wherein the bonding includes one of hydrophobic, hydrophilic, polymer, and metal bonding.

9. The method of claim 7, further comprising processing the first layer to form a plurality of multilayer devices, where each active region of the plurality of multilayer devices reside substantially within the boundaries defined by the sidewalls of the trench.

10. A method of fabricating a multilayer device, comprising:

etching a substrate to form at least a portion of a trench having sidewalls that are spaced apart from each other to define width thereof that is greater than a height of the trench;

bonding a structure to the substrate, wherein the structure includes one or more layers, the height of the trench being defined by a distance between a surface of an adjacent layer of the structure that is bonded to the substrate and a surface of the substrate that extends between the sidewalls of the trench; and

forming an optically active region on the structure located in an overlying relationship with the trench such that at least a portion of the active region resides substantially within boundaries defined by the sidewalls of the trench.

11. The method of claim 10, wherein the etching includes forming more than one trench on the substrate.

12. The method of claim 11, further comprising forming a plurality of multilayer devices on the structure, where an active region of each of the plurality of multilayer devices resides substantially within the boundaries defined by the sidewalls of a respective one of the trenches.

13. The method of claim 10, wherein each of the multilayer devices comprises one of a laser, a photodetector, a photointerconnect, a modulator, and a passive waveguide.

14. The method of claim 10, wherein the bonding includes one of hydrophobic bonding, hydrophilic bonding, polymer bonding and metal bonding.

15. The method of claim 14, further comprising heating the multilayer device to anneal a bonding agent used in the bonding.