SCREEN PRINTING ELECTRICAL CONTACTS TO NANOSTRUCTURED AREAS
First Claim
1. A silicon nanostructured device comprising:
- a non-nanostructured substrate;
a nanostructured area disposed on and contacting a surface of the substrate;
a passivating layer coating the nanostructured area, the passivating layer comprising one of aluminum oxide, silicon dioxide, or silicon nitride;
one or more first contacts comprising a comb-like pattern of metal directly contacting the nanostructured area;
a p-n junction below the nanostructured area; and
a second metal contact in electrical contact with the substrate.
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Accused Products
Abstract
A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
1 Citation
20 Claims
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1. A silicon nanostructured device comprising:
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a non-nanostructured substrate; a nanostructured area disposed on and contacting a surface of the substrate; a passivating layer coating the nanostructured area, the passivating layer comprising one of aluminum oxide, silicon dioxide, or silicon nitride; one or more first contacts comprising a comb-like pattern of metal directly contacting the nanostructured area; a p-n junction below the nanostructured area; and a second metal contact in electrical contact with the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A silicon nanostructured device comprising:
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a non-nanostructured substrate; a nanostructured area disposed on and contacting a surface of the substrate; a passivating layer coating the nanostructured area, the passivating layer comprising one of aluminum oxide, silicon dioxide, or silicon nitride; one or more first contacts comprising a comb-like pattern of metal directly contacting the nanostructured area; and one or more low resistance second contacts in electrical contact with the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification