SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
First Claim
1. A method of manufacturing an interconnection structure of a semiconductor integrated circuit device, the method comprising:
- forming a first conductive layer on a semiconductor substrate;
treating a surface of the first conductive layer to form a dielectric layer;
forming a second conductive layer on the dielectric layer;
patterning the second conductive layer and the dielectric layer to form a second conductive pattern;
patterning the first conductive layer to form a first conductive pattern having a length longer than that of the second conductive pattern; and
forming a contact part to electrically connect the first conductive pattern and the second conductive pattern,wherein the contact part is formed to simultaneously make contact with the first conductive pattern and the second conductive pattern.
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Accused Products
Abstract
An interconnection structure of the semiconductor integrated circuit device may be provided. The interconnection structure may include a first conductive pattern, a second conductive pattern, a dielectric layer and a contact part. The first conductive pattern may have a first width and a first length. The second conductive pattern may be formed over the first conductive pattern. The second conductive pattern may have a second width and a second length. The dielectric layer may be interposed between the first conductive to pattern and the second conductive pattern. The contact part may be configured to simultaneously make contact with the first conductive pattern and the second conductive pattern.
4 Citations
7 Claims
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1. A method of manufacturing an interconnection structure of a semiconductor integrated circuit device, the method comprising:
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forming a first conductive layer on a semiconductor substrate; treating a surface of the first conductive layer to form a dielectric layer; forming a second conductive layer on the dielectric layer; patterning the second conductive layer and the dielectric layer to form a second conductive pattern; patterning the first conductive layer to form a first conductive pattern having a length longer than that of the second conductive pattern; and forming a contact part to electrically connect the first conductive pattern and the second conductive pattern, wherein the contact part is formed to simultaneously make contact with the first conductive pattern and the second conductive pattern. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing an interconnection structure of a semiconductor integrated circuit device, the method comprising:
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forming a first conductive layer on a semiconductor substrate; treating a surface of the first conductive layer to form a dielectric layer; forming a second conductive layer on the dielectric layer; patterning the second conductive layer and the dielectric layer to form a second conductive pattern; forming a spacer on a sidewall of the second conductive pattern; etching the first conductive layer using the spacer and the second conductive pattern as an etch mask to form a first conductive pattern; and forming a contact part to connect the first conductive pattern and the second conductive pattern, wherein the contact part is formed to simultaneously make contact with the first conductive pattern and the second conductive pattern. - View Dependent Claims (6, 7)
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Specification