MANUFACTURING METHOD FOR IGZO ACTIVE LAYER AND OXIDE THIN FILM TRANSISTOR
First Claim
1. A manufacturing method for an IGZO active layer, comprising steps of:
- after depositing a first metal layer and a gate insulation layer on a substrate, depositing an IGZO material on the gate insulation layer, and forming an IGZO film; and
performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to adjust element contents on the surface of the IGZO film, and forming an IGZO active layer.
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Accused Products
Abstract
A manufacturing method for an IGZO active layer is disclosed. The method comprises steps of: after depositing a first metal layer and a gate insulation layer on a substrate, depositing an IGZO material on the gate insulation layer, and forming an IGZO film; and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to adjust element contents on the surface of the IGZO film, and forming an IGZO active layer. The present invention also correspondingly discloses a manufacturing method for an oxide thin film transistor. By implementing the embodiments of the present invention, the elements on the film surface of the IGZO active layer can be adjusted to improve electrical properties.
3 Citations
14 Claims
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1. A manufacturing method for an IGZO active layer, comprising steps of:
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after depositing a first metal layer and a gate insulation layer on a substrate, depositing an IGZO material on the gate insulation layer, and forming an IGZO film; and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to adjust element contents on the surface of the IGZO film, and forming an IGZO active layer. - View Dependent Claims (2, 3, 4)
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5. A manufacturing method for an oxide thin film transistor, comprising steps of:
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providing a substrate, and depositing a first metal layer on the substrate to form a gate electrode; depositing a gate insulation layer on the first metal layer; depositing an IGZO material on the gate insulation layer to form an IGZO film, and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to form an IGZO active layer; and depositing a second metal layer on the IGZO active layer and etching the second metal layer to form a gate electrode and a drain electrode. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification