SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first line;
a second line; and
a memory element, the memory element comprising;
a capacitor; and
a transistor, the transistor comprising;
an oxide semiconductor layer wherein at least a channel formation region is formed in the oxide semiconductor layer; and
a gate electrode with a gate insulating film interposed between the channel formation region and the gate electrode,wherein one of a source and a drain of the transistor is electrically connected to the first line,wherein the other of the source and the drain of the transistor is electrically connected to one of terminals of the capacitor,wherein the other of the terminals of the capacitor is electrically connected to the second line,wherein a carrier concentration in the oxide semiconductor layer is less than or equal to 5×
1014 cm−
3, andwherein a value of off-state current of the transistor is less than 1×
10−
13 A.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.
0 Citations
1 Claim
-
1. A semiconductor device comprising:
-
a first line; a second line; and a memory element, the memory element comprising; a capacitor; and a transistor, the transistor comprising; an oxide semiconductor layer wherein at least a channel formation region is formed in the oxide semiconductor layer; and a gate electrode with a gate insulating film interposed between the channel formation region and the gate electrode, wherein one of a source and a drain of the transistor is electrically connected to the first line, wherein the other of the source and the drain of the transistor is electrically connected to one of terminals of the capacitor, wherein the other of the terminals of the capacitor is electrically connected to the second line, wherein a carrier concentration in the oxide semiconductor layer is less than or equal to 5×
1014 cm−
3, andwherein a value of off-state current of the transistor is less than 1×
10−
13 A.
-
Specification