Semiconductor device and method of manufacturing the same

  • US 6,483,151 B2
  • Filed: 01/04/2001
  • Issued: 11/19/2002
  • Est. Priority Date: 01/21/2000
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a silicon substrate;

    an n-type well and a p-type well formed on the surface of said silicon substrate and separated from each other by an element separation region;

    a p-channel type insulated gate field effect transistor formed on said n-type well and having a first gate electrode; and

    an n-channel type insulated gate field effect transistor formed on said p-type well and having a second gate electrode;

    said first gate electrode formed on the surface of said n-type well by interposing a first gate oxide film ,and including a first conductive film of a nitride of a first high melting point metal directly contacted to the surface of said first gate oxide film and a second high melting point metal film formed on the surface of said first conductive film, and said second gate electrode formed on the surface of said p-well by interposing a second gate oxide film ,and including a second conductive film of a nitride of said first high melting point metal with higher nitrogen content than that of said first conductive film and directly contacted to the surface of said second gate oxide film and a metal film formed on the surface of said second conductive film.

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