Thin film transistor having pixel electrode connected to a laminate structure
First Claim
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1. A display device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium.
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Abstract
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
230 Citations
106 Claims
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1. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å
, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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28. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å
or less, and the third conductive layer comprises titanium.- View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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37. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å
, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum, and the third conductive layer comprises titanium. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45)
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46. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å
or less, and the third conductive layer comprises titanium.- View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54)
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55. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å
, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å
or less, and the third conductive layer comprises titanium.- View Dependent Claims (56, 57, 58, 59, 60, 61, 62, 63)
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64. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer having a thickness less than 1500 Å
, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising indium tin oxide electrically connected to the semiconductor layer through an electrode, the electrode having a laminate structure comprising a first conductive layer in contact with the semiconductor layer, a second conductive layer formed on the first conductive layer, and a third conductive layer formed on the second conductive layer and in contact with the pixel electrode, wherein the first conductive layer comprises titanium, the second conductive layer comprises aluminum having a thickness of 5000 Å
or less, and the third conductive layer comprises titanium.- View Dependent Claims (65, 66, 67, 68, 69, 70, 71, 72)
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73. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor region, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising a conductive oxide film electrically connected to the semiconductor region through an electrode, the electrode comprising a first layer in contact with the semiconductor region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode, wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium. - View Dependent Claims (74, 75, 76, 77, 78, 79, 80, 81)
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82. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a semiconductor region, and a gate electrode with a gate insulating film interposed therebetween; and
a pixel electrode comprising indium tin oxide electrically connected to the semiconductor region through an electrode, the electrode comprising a first layer in contact with the semiconductor region, a second layer formed on the first layer, and a third layer formed on the second layer and in contact with the pixel electrode, wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium. - View Dependent Claims (83, 84, 85, 86, 87, 88, 89, 90)
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91. A displat device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region which comprise silicon; and
a pixel electrode comprising a conductive oxide film electricallly connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer, wherein the pixel electrode is in contact with an upper surface of the third layer, and wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium. - View Dependent Claims (92, 93, 94, 95, 96, 97, 98)
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99. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a source region and a drain region which comprise silicon; and
a pixel electrode comprising indium tin oxide electrically connected to one of the source region and the drain region through an electrode, the electrode comprising a first layer in contact with the one of the source region and the drain region, a second layer formed on the first layer, and a third layer formed on the second layer, wherein the pixel electrode is in contact with an upper surface of the third layer, and wherein the first layer comprises titanium, the second layer comprises aluminum, and the third layer comprises titanium. - View Dependent Claims (101, 102, 103, 104, 105, 106)
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100. A display device according to cliam 99 wherein the source region and the drain region comprise crystalline silicon.
Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMiyazaki, Minoru, Murakami, Akane, Cui, Baochun, Yamamoto, Mutsuo
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Primary Examiner(s)NGO, NGAN V
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Application NumberUS10/193,162Publication NumberTime in Patent Office403 DaysField of Search257/59, 257/72, 257/350, 257/383, 257/763, 257/764, 257/765US Class Current257/350CPC Class CodesG02F 1/1368 in which the switching elem...H01L 2224/45124 Aluminium (Al) as principal...H01L 2224/48 of an individual wire conne...H01L 23/53223 Additional layers associate...H01L 27/12 the substrate being other t...H01L 27/124 with a particular compositi...H01L 29/458 for thin film silicon, e.g....H01L 2924/00 Indexing scheme for arrange...H01L 2924/00014 the subject-matter covered ...H01L 2924/10253 Silicon [Si]H01L 2924/13091 Metal-Oxide-Semiconductor F...
