Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
First Claim
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1. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and at least one copper-polishing accelerator, wherein the copper-polishing accelerator is a substance selected from the group consisting of a carboxylic acid, a sulfonic acid, a phosphonic acid, ammonia, and a salt or a derivative thereof.
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Abstract
A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, including an aqueous solvent and at least one amino acid having two or more nitrogen atoms.
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23 Claims
- 1. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and at least one copper-polishing accelerator, wherein the copper-polishing accelerator is a substance selected from the group consisting of a carboxylic acid, a sulfonic acid, a phosphonic acid, ammonia, and a salt or a derivative thereof.
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4. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and at least one copper-polishing accelerator, wherein the copper-polishing accelerator is a substance selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, glycolic acid, oxalic acid, malic acid, citric acid, succinic acid, succinic acid imide, N-hydroxysuccinic acid imide, lactic acid, tartaric acid, adipic acid, polyacrylic acid, benzoic acid, nicotinic acid, sulfuric acid, benzenesulfonic acid, sulfamic acid, hexameta-phosphoric acid, 1-hydroxyethylidene-1,1-diphosphonic acid, ethylamine, hexamethylene-tetramine, ethylenediamine, triethanolamine, tris(hydroxymethyl)aminomethane, urea, thiourea, N-methylthiourea, and a salt thereof.
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6. A polishing composition for polishing copper and or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and at least one copper-polishing accelerator, containing the copper-polishing accelerator in amol ratio of 0.1-10 to the amino acid having two or more nitrogen atoms.
- 10. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and at least one kind of abrasive grain, wherein the abrasive grain is selected from the group consisting of silica, alumina, titania, ceria, zirconia, manganese oxide, and a mixture thereof.
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19. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and at least one kind of abrasive grain, containing the abrasive grain in an amount of 30 mass % or less.
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21. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and an oxidizing agent, wherein the oxidizing agent is hydrogen peroxide.
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22. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent, at least one amino acid having two or more nitrogen atoms and an oxidizing agent, and containing the oxidizing agent in an amount of 0.1-10 mass %.
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23. A method for producing a semiconductor wiring wafer which comprises forming copper wiring and a diffusion barrier layer of tantalum or a tantalum compound on a semiconductor wafer, contacting the semiconductor wafer with a polishing pad;
- feeding a polishing composition between the semiconductor wafer and the polishing pad; and
polishing the wafer, wherein said polishing composition comprises an aqueous solvent, at least one amino acid having two or more nitrogen atoms and at least one copper-polishing accelerator, wherein the copper-polishing accelerator is a substance selected from the group consisting of a carboxylic acid, a sulfonic acid, a phosphoric acid, ammonia, and a salt or a derivative thereof.
- feeding a polishing composition between the semiconductor wafer and the polishing pad; and
Specification