Method for improving adhesion between dielectric material layers

• US 6,812,167 B2
• Filed: 06/05/2002
• Issued: 11/02/2004
• Est. Priority Date: 06/05/2002
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Li, Lain-Jong, Chen, Yu-Huei
• Primary Examiner(s): Cuneo, Kamand
• Assistant Examiner(s): KILDAY, LISA A
• Application Number:
  US10/163,045
• Publication Number:
  US 20030228769A1
• Time in Patent Office: 881 Days
• Field of Search: 438/770, 438/771, 438/780, 438/931, 427/465, 427/491, 427/505, 427/512, 427/515, 427/563, 427/249.1, 427/905
• US Class Current: 438/780
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/314 Inorganic layers H01L21/3105, H01L21/32 take precedence
• CPC Class Codes: Y10S 438/931 Silicon carbide semiconductor

Abstract

This invention provides a method to improve the adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device. The first step is to form a SiC-based dielectric material layer over a substrate. The SiC-based dielectric material layer is treated by oxygen plasma. A second layer of dielectric material is formed over the SiC-based dielectric material layer.

Claims

1. A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:

forming a first layer of dielectric material having a formula of SiC_xN_y wherein x≧

0, y≧

0 and x+y≠

0;

supplying oxygen ions to said first layer of dielectric material; and

forming a second layer of dielectric material over said first layer of dielectric material.

2. A method according to claim 1, wherein said first layer of dielectric material is selected from the group consisting of SiC, SiN and the mixture thereof.

3. A method according to claim 1, wherein said first layer of dielectric material is formed using a chemical vapor deposition technique.

4. A method according to claim 1, wherein the step of supplying oxygen ions to said first layer of dielectric material is performed by oxygen plasma treatment.

5. A method according to claim 4, wherein said oxygen plasma treatment is performed by the gas flow of 50-500 sccm, the power at 50-300 W and the treatment times of 5-30 sec.

6. A method according to claim 5, wherein said oxygen plasma treatment is performed at a chemical vapor deposition apparatus.

7. A method according to claim 1, wherein said second layer includes silicon based dielectric material.

8. A method according to claim 7, wherein said silicon based dielectric material is siloxane.

9. A method according to claim 7, wherein said silicon based dielectric material is polyaryl ether.

10. A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:

forming a first layer of Sic-based dielectric material;

treating said first layer of SiC-based dielectric material by oxygen plasma; and

forming a second layer of silicon-based dielectric material over said first layer.

11. A method according to claim 10, wherein said first layer is formed using a chemical vapor deposition technique.

12. A method according to claim 10, wherein said oxygen plasma treatment is performed by the gas flow of 50-500 sccm, the power at 50-300 W and the treatment times of 5-30 sec.

13. A method according to claim 10, wherein said oxygen plasma treatment is performed at a chemical vapor deposition apparatus.