Bumping technology in stacked die configurations

• US 6,847,105 B2
• Filed: 09/21/2001
• Issued: 01/25/2005
• Est. Priority Date: 09/21/2001
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Koopmans, Michel
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US09/960,089
• Publication Number:
  US 20030057539A1
• Time in Patent Office: 1,222 Days
• Field of Search: 257/678, 257/725, 257/734, 257/737, 257/738, 257/787, 257/685, 257/686, 257/687, 257/690, 257/723, 257/724, 257/730, 257/777, 257/782, 257/783, 257/778, 257/779, 257/780, 257/784, 257/786, 361/600, 361/679, 361/728, 361/729, 361/748, 361/760, 361/767, 361772-774, 174/50, 174 521- 524, 156/60, 298/41, 298/55, 264/272.11, 438/106, 438/109, 438/118, 438/125, 438/126, 438/127, 438/612, 438/613
• US Class Current: 257/686
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/06135 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
• CPC Class Codes: H01L 2224/06136 Covering only the central area of the surface to be connected, i.e. central arrangements
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4824 Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/731 Location prior to the connecting process
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06555 : Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
• CPC Class Codes: H01L 2225/06562 : at least one device in the stack being rotated or offset
• CPC Class Codes: H01L 2225/06575 : Auxiliary carrier between devices, the carrier having no electrical connection structure
• CPC Class Codes: H01L 2225/06586 : Housing with external bump or bump-like connectors
• CPC Class Codes: H01L 23/13 : characterised by the shape
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: Y10T 29/49117 : Conductor or circuit manufacturing
• CPC Class Codes: Y10T 29/49124 : On flat or curved insulated base, e.g., printed circuit, etc.
• CPC Class Codes: Y10T 29/49172 : by molding of insulating material
• CPC Class Codes: Y10T 29/49174 : Assembling terminal to elongated conductor
• CPC Class Codes: Y10T 29/49176 : with molding of electrically insulating material
• CPC Class Codes: Y10T 29/49204 : Contact or terminal manufacturing
• CPC Class Codes: Y10T 29/49222 : forming array of contacts or terminals
• CPC Class Codes: Y10T 83/0467 : By separating products from each other

Abstract

A stacked semiconductor package including a plurality of stacked semiconductor devices on a substrate, and a method of forming the same. The semiconductor devices are stacked in an active surface-to-backside configuration. The top semiconductor die is flipped over to face the active surface of the semiconductor die directly below. An electrical connector can extend from a bond pad on the top semiconductor die to a redistribution circuit on the semiconductor die below. The redistribution circuit can be electrically connected to a substrate. Alternatively, an electrical connector extends from a bond pad on top semiconductor die to a bond pad on a substrate.

Claims

1. A stacked semiconductor assembly, comprising:

a first semiconductor die including an active surface and a backside, said active surface including a plurality of bond pads and at least one redistribution bond pad circuit thereon, said plurality of bond pads electrically connected to integrated circuitry of said first semiconductor die, said at least one redistribution bond pad circuit electrically isolated from said integrated circuitry of said first semiconductor die and including a plurality of redistribution bond pads;

a second semiconductor die including an active surface, a backside, and a plurality of bond pads on said active surface thereof, said active surface of said second semiconductor die facing said active surface of said first semiconductor die; and

at least one electrical connector extending between at least one bond pad of said plurality of bond pads on said active surface of said second semiconductor die and at least one redistribution bond pad of said plurality of redistribution bond pads on said first semiconductor die.

2. The stacked semiconductor assembly of claim 1, wherein said first semiconductor die is disposed on a substrate.

3. The stacked semiconductor assembly of claim 2, wherein said first semiconductor die is electrically connected to said substrate with intermediate conductive elements.

4. The stacked semiconductor assembly of claim 3, wherein said intermediate conductive elements comprise bond wires.

5. The stacked semiconductor assembly of claim 2, wherein said at least one redistribution bond pad circuit comprises a plurality of conductive traces, at least one conductive trace of said plurality of conductive traces connecting a first redistribution bond pad of said plurality of redistribution bond pads and a second redistribution bond pad of said plurality of redistribution bond pads, said second redistribution bond pad proximate the perimeter of said first semiconductor die.

6. The stacked semiconductor assembly of claim 5, wherein said second redistribution bond pad is electrically connected to said substrate.

7. The stacked semiconductor assembly of claim 1, wherein peripheral edges of said first semiconductor die and edges of said second semiconductor die are substantially vertically aligned.

8. The stacked semiconductor assembly of claim 1, wherein said second semiconductor die is smaller than said first semiconductor die.

9. The stacked semiconductor assembly of claim 1, wherein said at least one electrical connector spaces the active surface of said second semiconductor die from the active surface of said first semiconductor die.

10. The stacked semiconductor assembly of claim 1, further comprising a substrate under said first semiconductor die, said substrate including a plurality of contact areas thereon.

11. The stacked semiconductor assembly of claim 10, wherein at least one bond pad of said plurality of bond pads on said first semiconductor die is electrically connected to a corresponding contact area of said plurality of contact areas on said substrate.

12. The stacked semiconductor assembly of claim 10, wherein said at least one redistribution bond pad is electrically connected to a corresponding contact area of said plurality of contact areas on said substrate.

13. The stacked semiconductor assembly of claim 10, further comprising at least one semiconductor die vertically stacked on said substrate, wherein said backside of said first semiconductor die is located above said at least one stacked semiconductor die.

14. The stacked semiconductor assembly of claim 1, further comprising an insulative layer between said first semiconductor die and said second semiconductor die.

15. The stacked semiconductor assembly of claim 14, wherein said insulative layer comprises an adhesive material.

16. The stacked semiconductor assembly of claim 1, wherein said at least one electrical connector comprises a substantially columnar pillar.

17. The stacked semiconductor assembly of claim 16, wherein said substantially columnar pillar is copper.

18. The stacked semiconductor assembly of claim 1, wherein said at least one electrical connector comprises a solder ball.

19. The stacked semiconductor assembly of claim 1, wherein at least one peripheral edge of said second semiconductor die extends laterally beyond at least one corresponding peripheral edge of said first semiconductor die.

20. The stacked semiconductor assembly of claim 19, further comprising at least one electrical connector extending from at least one bond pad of said plurality of bond pads on said second semiconductor die and a corresponding contact area of a substrate.

21. The stacked semiconductor assembly of claim 1, wherein at least one peripheral edge of said first semiconductor die extends laterally beyond at least one corresponding peripheral edge of said second semiconductor die.

22. A semiconductor assembly, comprising:

a substrate;

a first semiconductor die including an active surface, a second surface, and a plurality of peripheral edges, said second surface disposed on said substrate, said active surface having a plurality of bond pads thereon;

a second semiconductor die including an active surface, a second surface, a plurality of peripheral edges and a plurality of bond pads on said active surface, said active surface of said second semiconductor die facing said active surface of said first semiconductor die, at least one bond pad of said plurality of bond pads of said first semiconductor die communicating with a corresponding redistribution circuit of said second semiconductor die, said redistribution circuit being electrically isolated from integrated circuitry of said second semiconductor die, at least one edge of said plurality of peripheral edges of said second semiconductor die extending laterally beyond at least one corresponding peripheral edge of said plurality of peripheral edges of said first semiconductor die; and

at least one connective element extending from at least one bond pad of said plurality of bond pads on said active surface of said second semiconductor die to a corresponding contact area of said substrate adjacent to said at least one corresponding peripheral edge of said first semiconductor die.

23. The semiconductor assembly of claim 22, further comprising at least one additional semiconductor die stacked vertically between said first semiconductor die and said second semiconductor die.

24. The semiconductor assembly of claim 23, wherein said at least one additional semiconductor die and said first semiconductor die are all electrically connected to said substrate by discrete conductive elements.

25. The semiconductor assembly of claim 24, wherein said discrete conductive elements comprise at least one of wire bonds, TAB elements, and leads.

26. The semiconductor assembly of claim 23, wherein a third semiconductor die of said at least one additional semiconductor die is disposed directly below said second semiconductor die, said third semiconductor die including an active surface and a backside, said active surface including a plurality of bond pads and at least one redistribution bond pad circuit thereon, said plurality of bond pads of said third semiconductor die electrically connected to integrated circuitry of said third semiconductor die, said at least one redistribution bond pad circuit independent from the integrated circuitry of said third semiconductor die and including a plurality of redistribution bond pads.

27. The semiconductor assembly of claim 26, wherein said at least one redistribution bond pad circuit comprises a plurality of conductive traces, at least one conductive trace of said plurality of conductive traces connecting a first redistribution bond pad of said plurality of redistribution bond pads and a second redistribution bond pad of said plurality of redistribution bond pads, said second redistribution bond pad proximate the perimeter of said third semiconductor die.

28. The semiconductor assembly of claim 27, wherein at least one connective element extends between said least one bond pad on said active surface of said second semiconductor die and said first redistribution bond pad on said active surface of said third semiconductor die.

29. The semiconductor assembly of claim 28, wherein said second redistribution bond pad is electrically connected to said substrate by discrete conductive elements.

30. The semiconductor assembly of claim 22, wherein said at least one connective element comprises a substantially columnar pillar.

31. The semiconductor assembly of claim 30, wherein said substantially columnar pillar is copper.

32. The semiconductor assembly of claim 22, wherein said at least one connective element comprises a solder ball.

33. The semiconductor assembly of claim 22, wherein said at least one connective element extends from said at least one bond pad of said second semiconductor die to said corresponding contact area of said substrate.

34. The semiconductor assembly of claim 22, further comprising an insulative layer between said first semiconductor die and said second semiconductor die.

35. The semiconductor assembly of claim 34, wherein said insulative layer comprises an adhesive material.

36. A semiconductor device for use in a stacked semiconductor assembly, said semiconductor device comprising:

a backside;

an active surface including a plurality of bond pads; and

at least one redistribution bond pad circuit on said active surface, said at least one redistribution bond pad circuit electrically isolated from integrated circuitry of said semiconductor device.

37. The semiconductor device of claim 36, wherein said plurality of bond pads is electrically connected to said integrated circuitry of said semiconductor device.

38. The semiconductor device of claim 37, wherein said plurality of bond pads is centrally located on said active surface.

39. The semiconductor device of claim 37, wherein said plurality of bond pads is located proximate the perimeter of said active surface.

40. The semiconductor device of claim 36, wherein said at least one redistribution bond pad circuit comprises a first redistribution bond pad electrically connected to a second redistribution bond pad.

41. The semiconductor device of claim 40, wherein said at least one redistribution bond pad circuit further comprises a conductive trace extending between said first redistribution bond pad and said second redistribution bond pad.

42. The semiconductor device of claim 41, wherein said conductive trace comprises at least one of titanium, copper, aluminum, NiV and nickel.

43. The semiconductor device of claim 40, wherein said first redistribution bond pad is located on said active surface in a location that mirrors a location of a corresponding bond pad of a second semiconductor device to be positioned above said semiconductor device.

44. The semiconductor device of claim 43, wherein said second redistribution bond pad is proximate the perimeter of said semiconductor device.

45. The semiconductor device of claim 40, wherein said first redistribution bond pad is electrically connected to a corresponding bond pad on an active surface of a second semiconductor device.

46. The semiconductor device of claim 45, wherein said second redistribution bond pad is electrically connected to a contact area on a substrate.

47. A semiconductor assembly, comprising:

a substrate;

a first semiconductor die including an active surface, a second surface, and a plurality of peripheral edges, said second surface disposed on said substrate, said active surface having a plurality of bond pads thereon;

a second semiconductor die including an active surface, a second surface, a plurality of peripheral edges and a plurality of bond pads on said active surface, said active surface of said second semiconductor die facing said active surface of said first semiconductor die, at least one edge of said plurality of peripheral edges of said second semiconductor die extending laterally beyond at least one corresponding peripheral edge of said plurality of peripheral edges of said first semiconductor die;

a third semiconductor die disposed directly below said second semiconductor die, said third semiconductor die including an active surface and a backside, said active surface including a plurality of bond pads and at least one redistribution bond pad circuit thereon, said plurality of bond pads of said third semiconductor die electrically connected to integrated circuitry of said third semiconductor die, said at least one redistribution bond pad circuit independent from the integrated circuitry of said third semiconductor die and including a plurality of redistribution bond pads; and

at least one connective element extending from at least one bond pad of said plurality of bond pads on said active surface of said second semiconductor die to a corresponding contact area of said substrate adjacent to said at least one corresponding peripheral edge of said first semiconductor die.

48. The semiconductor assembly of claim 47, wherein said at least one redistribution bond pad circuit comprises a plurality of conductive traces, at least one conductive trace of said plurality of conductive traces connecting a first redistribution bond pad of said plurality of redistribution bond pads and a second redistribution bond pad of said plurality of redistribution bond pads, said second redistribution bond pad proximate the perimeter of said third semiconductor die.

49. The semiconductor assembly of claim 48, wherein at least one connective element extends between said least one bond pad on said active surface of said second semiconductor die and said first redistribution bond pad on said active surface of said third semiconductor die.

50. The semiconductor assembly of claim 49, wherein said second redistribution bond pad is electrically connected to said substrate by discrete conductive elements.

51. The semiconductor assembly of claim 47, wherein said discrete conductive elements comprise at least one of wire bonds, TAB elements, and leads.

52. The semiconductor assembly of claim 47, wherein said at least one connective element comprises a substantially columnar pillar.

53. The semiconductor assembly of claim 52, wherein said substantially columnar pillar is copper.

54. The semiconductor assembly of claim 47, wherein said at least one connective element comprises a solder ball.

55. The semiconductor assembly of claim 47, wherein said at least one connective element extends from said at least one bond pad of said second semiconductor die to said corresponding contact area of said substrate.

56. The semiconductor assembly of claim 47, further comprising an insulative layer between said first semiconductor die and said second semiconductor die.

57. The semiconductor assembly of claim 56, wherein said insulative layer comprises an adhesive material.