Method of manufacturing the semiconductor device
First Claim
1. A method of manufacturing a semiconductor device including a capacitor including a pair of electrodes and a ferroelectric film with ferroelectricity sandwiched therebetween, the method comprising the steps of:
- (a) depositing the ferroelectric film on a first substrate;
(b) forming the capacitor by grinding the ferroelectric film and forming the electrodes so that the electrodes are perpendicular to a direction of a polarization axis of the ferroelectric film;
(c) forming a first interlayer insulating film covering a surface of the first substrate and the capacitor;
(d) forming a transistor on a second substrate, the transistor including a gate electrode and a diffusion region;
(e) forming a second interlayer insulating film covering a surface of the surface of the second substrate and the transistor;
(f) flattening surfaces of the first and second interlayer insulating films by chemical mechanical polishing;
(g) integrating the first and second substrates by joining the flattened surfaces of the first and second interlayer insulating film; and
(h) removing the first substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of manufacturing semiconductor device including a capacitor including a pair of electrodes and a ferroelectric flu with ferroelectricity sandwiched therebetween, by depositing the ferroelectric film on first substrate; forming the capacitor by grinding the ferroelectric film and forming the electrodes so that the electrodes are perpendicular to a direction of a polarization axis of the ferroelectric film; forming a first interlayer insulating film covering a surface of the first substrate and the capacitor; forming a transistor on a second substrate, the transistor including a ate electrode and a diffusion region; forming a second interlayer insulating film covering a surface of the second substrate and the transistor; flattening surfaces of the first and second interlayer insulating films by chemical mechanical polishing; integrating the first and second substrates by joining the flattened surfaces of the first and second interlayer insulating films; and removing the first substrate.
13 Citations
7 Claims
-
1. A method of manufacturing a semiconductor device including a capacitor including a pair of electrodes and a ferroelectric film with ferroelectricity sandwiched therebetween, the method comprising the steps of:
-
(a) depositing the ferroelectric film on a first substrate;
(b) forming the capacitor by grinding the ferroelectric film and forming the electrodes so that the electrodes are perpendicular to a direction of a polarization axis of the ferroelectric film;
(c) forming a first interlayer insulating film covering a surface of the first substrate and the capacitor;
(d) forming a transistor on a second substrate, the transistor including a gate electrode and a diffusion region;
(e) forming a second interlayer insulating film covering a surface of the surface of the second substrate and the transistor;
(f) flattening surfaces of the first and second interlayer insulating films by chemical mechanical polishing;
(g) integrating the first and second substrates by joining the flattened surfaces of the first and second interlayer insulating film; and
(h) removing the first substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification
-
- Resources
-
Current AssigneeFujitsu Limited
-
Original AssigneeFujitsu Limited
-
InventorsMaruyama, Kenji
-
Primary Examiner(s)Kang, Donghee
-
Application NumberUS10/718,726Publication NumberTime in Patent Office659 DaysField of Search438/3, 438/238, 438/239, 438/241, 438/250, 438/386, 438/399, 438/393, 257295-296, 257/300, 257/303, 257306-309US Class Current438/239CPC Class CodesH01L 21/76838 characterised by the format...H01L 28/55 with a dielectric comprisin...H01L 28/90 having vertical extensionsH10B 53/00 Ferroelectric RAM [FeRAM] d...H10B 53/30 characterised by the memory...
