Semiconductor device and method for fabricating the same

  • US 7,265,450 B2
  • Filed: 07/28/2004
  • Issued: 09/04/2007
  • Est. Priority Date: 09/09/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate provided with a semiconductor element;

    a first interlayer dielectric film provided on the substrate;

    a first interconnect groove provided in the first interlayer dielectric film;

    a first interconnect provided within the first interconnect groove and having convex or concave portions at least at one of its side surfaces and bottom surface;

    a second interlayer dielectric film provided over the first interlayer dielectric film and the first interconnect; and

    a first plug that passes through the second interlayer dielectric film and comes into contact with a part of the first interconnect.

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