Multilayer coatings for EUV mask substrates
First Claim
1. An apparatus, the apparatus comprising:
- a substrate;
a first multilayer of films on top of the substrate to form a flat top surface by a first deposition process; and
a second multilayer of films on top of and in contact with the first multilayer of films, the second multilayer of films effectuating a Bragg reflector to reflect extreme ultraviolet radiation, the second multilayer of films being deposited with a second deposition process different from the first deposition process, wherein the second deposition process comprises an atomic layer deposition process.
1 Assignment
0 Petitions
Accused Products
Abstract
Techniques, methods, and structures disclosed in relation to extreme ultraviolet (EUV) lithography in semiconductor processing. In one exemplary implementation, a method may comprise using ion beam deposition to deposit a first multilayer stack of thin films on a substrate to planarize and smooth surface defects on the substrate. The method includes using atomic layer deposition to deposit a second multilayer stack of thin films on the first multilayer stack of thin films. The second multilayer stack of thin films may comprise an extreme ultraviolet reflective multilayer stack. The second multilayer stack of thin films may comprise fewer surface defects than the first multilayer stack of thin films. The method may further comprise processing an extreme ultraviolet mask blank to form an extreme ultraviolet reflective mask.
9 Citations
13 Claims
-
1. An apparatus, the apparatus comprising:
-
a substrate; a first multilayer of films on top of the substrate to form a flat top surface by a first deposition process; and a second multilayer of films on top of and in contact with the first multilayer of films, the second multilayer of films effectuating a Bragg reflector to reflect extreme ultraviolet radiation, the second multilayer of films being deposited with a second deposition process different from the first deposition process, wherein the second deposition process comprises an atomic layer deposition process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. An apparatus, the apparatus comprising:
-
a low thermal expansion substrate; a first multilayer of thin films on top of the low thermal expansion substrate, the first multilayer of thin films being deposited with ion beam deposition; and a second multilayer of thin films on top of and in contact with the first multilayer of thin films, the second multilayer of thin films comprising a multilayer reflective to extreme ultraviolet radiation, the second multilayer of thin films being deposited with atomic layer deposition. - View Dependent Claims (12, 13)
-
Specification