Vertical-type capacitor structure

• US 7,385,241 B2
• Filed: 12/28/2005
• Issued: 06/10/2008
• Est. Priority Date: 12/29/2004
• Status: Expired due to Fees

• Current Assignee: Columba Technologies, Inc. (Quarterhill Inc. (f/k/a Wi-LAN Inc.))
• Original Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Inventors: Choi, Chee Hong
• Primary Examiner(s): Soward; Ida M.
• Application Number:
  US11/318,477
• Publication Number:
  US 20060138517A1
• Time in Patent Office: 895 Days
• Field of Search: 257307-308, 257/534, 257/600, 257758-760
• US Class Current: 257/307
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/86 having horizontal extensions
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Disclosed are a vertical-type capacitor and a formation method thereof. The capacitor includes a first electrode wall and a second electrode wall perpendicular to a semiconductor substrate, and at least one dielectric layer on the substrate to insulate the first electrode wall from the second electrode wall. The first electrode wall includes a plurality of first conductive layers and a plurality of first contacts, the plurality of first conductive layers being interconnected with each other by each of the plurality of first contacts. The second electrode wall includes a plurality of second conductive layers and a plurality of second contacts, the plurality of second conductive layers being interconnected with each other by each of the plurality of second contacts.

Claims

1. A capacitor, comprising:

a first electrode wall perpendicular to a semiconductor substrate, including a plurality of first conductive layers and a plurality of first contacts, the plurality of first conductive layers being interconnected with each other by each of the plurality of first contacts, the first contacts having the same dimension as the interconnected first conductive layers;

a second electrode wall perpendicular to the semiconductor substrate, including a plurality of second conductive layers and a plurality of second contacts, the plurality of second conductive layers being interconnected with each other by each of the plurality of second contacts, the second contacts having the same dimension as the interconnected second conductive layers; and

at least one dielectric layer on the substrate to insulate the first electrode wall from the second electrode wall, the dielectric layer having the same shape as the first electrode wall and the second electrode wall.

2. The capacitor of claim 1, wherein the plurality of first and second conductive layers comprise at least one member of the group consisting of copper, aluminum, and tungsten.

3. The capacitor of claim 1, wherein the plurality of first and second contacts comprise at least one member of the group consisting of copper, aluminum, and tungsten.

4. The capacitor of claim 1, wherein the first electrode wall, the second electrode wall, and the at least one dielectric layer are formed on an isolation region of the semiconductor substrate.