Integrated circuit transformer devices for on-chip millimeter-wave applications

• US 7,427,801 B2
• Filed: 04/08/2005
• Issued: 09/23/2008
• Est. Priority Date: 04/08/2005
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Shlafman, Shlomo, Goren, David, Sheinman, Benny, Pfeiffer, Ullrich R.
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US11/102,292
• Publication Number:
  US 20060226510A1
• Time in Patent Office: 1,264 Days
• Field of Search: 257/531, 257/528, 257/619, 257/773, 336/84.C, 336/200
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/5286 Arrangements of power or ground buses
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03F 3/26 Push-pull amplifiers; Phase-splitters therefor duplicated single-ended push-pull arrangements or phase-splitters therefor H03F3/30
• CPC Class Codes: H03F 3/45089 Non-folded cascode stages
• CPC Class Codes: H03F 3/602 Combinations of several amplifiers

Abstract

Methods are provided for building integrated circuit transformer devices having compact and optimized architectures for use in MMW (millimeter-wave) applications. The integrated circuit transformer devices have universal and scalable architectures that can be used as templates or building blocks for constructing various types of on-chip devices for millimeter-wave applications.

Claims

1. An integrated circuit transformer, comprising:

a substrate having a substrate surface in a lateral plane;

a ground shield formed on the substrate surface;

a primary conductor comprising an elongated conductive strip having a longitudinal axis extending in a first direction; and

a secondary conductor comprising an elongated conductive strip having a longitudinal axis extending in the first direction;

wherein the primary conductor and the secondary conductor lie in respective different planes substantially parallel to the lateral plane and are aligned with one another and to form a coupled-wire structure that is disposed adjacent to the ground shield; and

wherein the ground shield comprises a pattern of close-ended parallel elongated slots, wherein a longitudinal axis of each of the elongated slots of the ground shield extends in a second direction that is orthogonal to the first direction, and wherein the ground shield comprises edge regions that provide current return paths that are collinear to the first direction, wherein the edge regions are disposed adjacent to ends of the close-ended parallel elongated slots.

2. The integrated circuit transformer of claim 1, wherein the ground shield, the primary conductor and the secondary conductor are disposed on different layers of an integrated circuit and aligned to form a stacked structure.

3. The integrated circuit transformer of claim 2, further comprising:

a first insulation layer disposed between the ground shield and secondary conductor; and

a second insulation layer disposed between the secondary conductor and the primary conductor.

4. The integrated circuit transformer of claim 1, wherein the ground shield, and primary and secondary conductors are formed from different BEOL (back end of line) metallization layers.

5. The integrated circuit transformer of claim 1, wherein the primary and secondary conductors are rectangular and have lengths measured in the first direction and widths measured in a direction perpendicular to the first direction, and wherein the respective lengths and widths of the primary and secondary conductors are substantially the same.

6. The integrated circuit transformer of claim 1, wherein the primary conductor has a thickness that is greater than a thickness of the secondary conductor.

16. The integrated circuit transformer of claim 1, wherein the ground shield further comprises a plurality of parallel conductive strips arranged to form the pattern of close-ended parallel elongated slots, and wherein plurality of parallel conductive strips are commonly connected at end portions thereof along the edge regions.

7. A semiconductor IC (integrated circuit) chip, comprising:

an integrated circuit comprising a transformer, wherein the transformer comprises;

a ground shield disposed in a lateral plane;

a primary conductor comprising at least one elongated conductive strip having a longitudinal axis extending in a first direction;

a secondary conductor comprising at least one elongated conductive strip having a longitudinal axis extending in the first direction;

wherein the primary conductor and the secondary conductor lie in respective planes substantially parallel to the lateral plane and are aligned with one another to form a coupled-wire structure that is disposed adjacent to the ground shield; and

wherein the ground shield comprises a pattern of close-ended parallel elongated slots, wherein a longitudinal axis of each of the elongated slots of the ground shield extends in a second direction that is orthogonal to the first direction, and edge regions that provide current return paths that are collinear to the first direction, wherein the edge regions are disposed adjacent to ends of the close-ended parallel elongated slots.

8. The IC chip of claim 7, wherein the ground shield, the primary conductor and the secondary conductor are disposed on different layers and aligned to form a stacked structure.

9. The semiconductor IC chip of claim 7, wherein the transformer is implemented as a resonant tuning circuit to provide resonance at a frequency of 20 GHz or greater, wherein capacitances are provided at both ends of the secondary conductor of the transformer.

10. The semiconductor IC chip of claim 7, wherein the transformer is connected to an input or an output of an amplifier.

11. The semiconductor IC chip of claim 10, wherein the amplifier comprises a differential push-pull amplifier, wherein the primary conductor is connected between differential output nodes of the amplifier, and wherein a DC bias voltage is applied to the primary conductor.

12. The semiconductor IC chip of claim 7, wherein the primary conductor of the transformer comprises a plurality of elongated conductive strips and wherein the secondary conductor of the transformer comprises a plurality of elongated conductive strips that are serially connected to each other, and wherein each elongated conductive strip of the primary conductor is aligned to one of the serially connected elongated conductive strips of the secondary conductor.

13. The semiconductor chip of claim 12, wherein each elongated conductive strip of the primary conductor is connected between output nodes of a different differential amplifier.

14. The semiconductor IC chip of claim 7, wherein the transformer comprises a ring-like layout pattern.

15. The semiconductor IC chip of claim 7, wherein the integrated circuit transformer is implemented as a BALUN.