Image sensor and method of manufacturing the same

• US 7,666,705 B2
• Filed: 04/30/2008
• Issued: 02/23/2010
• Est. Priority Date: 05/03/2007
• Status: Active Grant

• Current Assignee: DB HiTek Co., Ltd.
• Original Assignee: Dongbu HiTek Co., Ltd.
• Inventors: Yun, Young Je
• Primary Examiner(s): Monbleau; Davienne
• Assistant Examiner(s): MULCARE, SHWETA PRASAD
• Application Number:
  US12/112,755
• Publication Number:
  US 20080272416A1
• Time in Patent Office: 664 Days
• Field of Search: 438/69, 438/70, 438/71, 438/72, 438/27, 438/31, 438/32, 438/200, 257/E31.127, 257/432, 257290-292, 257/333
• US Class Current: 438/69
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

Provided is an image sensor and method of manufacturing the same. The image sensor can include a semiconductor substrate, a metal interconnection layer, an inorganic layer, lens seed patterns, and microlenses. The semiconductor substrate can include unit pixels. The metal interconnection layer can be disposed on the semiconductor substrate to provide signal and poser connections to the unit pixels. The inorganic layer can be disposed on the metal interconnection layer. The lens seed patterns are selectively disposed on the inorganic layer and are formed of an organic material. The microlenses are formed on the lens seed patterns.

Claims

1. A method of manufacturing an image sensor, comprising:

forming an inorganic layer on a semiconductor substrate including unit pixels;

selectively forming lens seed patterns comprising an organic material on the inorganic layer; and

forming microlenses on the lens seed patterns,

where the forming of the lens seed pattern comprises;

forming gap patterns on the inorganic layer;

forming lens seed layer on the inorganic layer and the gap patterns using a coating process; and

removing the gap patterns and the lens seed layer on the gap patterns to form the lens seed patterns spaced apart from each other.

2. The method according to claim 1, wherein forming the gap patterns on the inorganic layer comprises performing a photolithography process using a photomask having an opposite pattern to a photomask for the microlenses.

3. The method according to claim 1, wherein forming the lens seed layer on the inorganic layer and the gap patterns comprises coating the lens seed layer to a thickness of about 10 nm to 1,000 nm.

4. The method according to claim 1, further comprising, before the removing of the gap patterns and the lens seed layer on the gap patterns:

developing the lens seed layer; and

heat-treating the lens seed layer to cure the lens seed layer.

5. The method according to claim 1, wherein removing the gap patterns and the lens seed layer on the gap patterns comprises using a solvent.

6. The method according to claim 5, wherein the solvent comprises a mixture or propylene glycol monomethyl ether (PGME) and propylene glycol monomethyl ether acetate (PGMEA).

7. The method according to claim 1, wherein the lens seed layer on the gap patterns is simultaneously removed with the gap patterns by the removal of the gap patterns.

8. The method according to claim 1, wherein forming the inorganic layer comprises depositing a hydrophilic oxide layer.

9. The method according to claim 1, wherein the lens seed patterns comprise a thermal resin.