Power semiconductor component, power semiconductor device as well as methods for their production
First Claim
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1. A power semiconductor component comprising a semiconductor body with a front face and a rear face, the front face having a structured metal seed layer as a front-face metallization which provides at least one first contact pad, wherein the structured metal seed layer is arranged directly on the semiconductor body and has a thickness d where 1 nm≦
- d≦
0.5 μ
m.
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Abstract
A power semiconductor component (2) has a semiconductor body with a front face (7) and a rear face (9). The front face (7) has a front-face metallization (8), which provides at least one first contact pad (11). A structured metal seed layer (14) is provided as the front-face metallization (8), is arranged directly on the semiconductor body, and has a thickness d, where 1 nm≦d≦0.5 μm.
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32 Claims
- 1. A power semiconductor component comprising a semiconductor body with a front face and a rear face, the front face having a structured metal seed layer as a front-face metallization which provides at least one first contact pad, wherein the structured metal seed layer is arranged directly on the semiconductor body and has a thickness d where 1 nm≦
Specification