Method for low temperature bonding and bonded structure

• US 7,807,549 B2
• Filed: 10/31/2007
• Issued: 10/05/2010
• Est. Priority Date: 02/16/2000
• Status: Expired due to Fees

• Current Assignee: Invensas Bonding Technologies, Inc. (Adeia Inc.)
• Original Assignee: Ziptronix Incorporated (Adeia Inc.)
• Inventors: Enquist, Paul M., Tong, Qin-Yi, Fountain, Gaius Gillman Jr.
• Primary Examiner(s): Richards; N Drew
• Assistant Examiner(s): Garcia; Joannie A
• Application Number:
  US11/980,664
• Publication Number:
  US 20080053959A1
• Time in Patent Office: 1,070 Days
• Field of Search: 438/406, 438/455, 438/459, 438/974, 148/DIG.12
• US Class Current: 438/455
• CPC Class Codes: H01L 21/0206 during, before or after processing of insulating layers
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/31105 Etching inorganic layers
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/322 to modify their internal properties, e.g. to produce internal imperfections
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2224/8301 Cleaning the layer connector, e.g. oxide removal step, desmearing
• CPC Class Codes: H01L 2224/8303 Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector
• CPC Class Codes: H01L 2224/83031 by chemical means, e.g. etching, anodisation
• CPC Class Codes: H01L 2224/8309 Vacuum
• CPC Class Codes: H01L 2224/83099 Ambient temperature
• CPC Class Codes: H01L 2224/8319 Arrangement of the layer connectors prior to mounting
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2224/83896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 2224/83948 Thermal treatments, e.g. annealing, controlled cooling
• CPC Class Codes: H01L 24/26 Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/085 : including field-effect components only
• CPC Class Codes: H01L 29/06 : characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/16 : including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01084 : Polonium [Po]
• CPC Class Codes: H01L 2924/01093 : Neptunium [Np]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: Y10S 148/012 : Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 438/974 : Substrate surface preparation
• CPC Class Codes: Y10T 156/10 : Methods of surface bonding and/or assembly therefor
• CPC Class Codes: Y10T 156/1043 : Subsequent to assembly

Abstract

A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO₂. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.

Claims

1. A bonding method, comprising:

bonding first and second materials;

removing a substantial portion of said first material to leave a remaining portion;

forming a first bonding surface on said remaining portion;

forming a second bonding surface on a third material, at least one of said first and second surfaces comprising an insulating material;

enhancing activation of one of said first and second bonding surfaces;

terminating one of said first and second bonding surfaces with species allowing formation of chemical bonds;

bringing together said first and second bonding surfaces; and

forming a chemical bond between said remaining portion and said third material.

2. A method as recited in claim 1, comprising:

forming a bond between said remaining portion and said third material, with a strength of at least 500 mJ/m².

3. A method as recited in claim 1, comprising:

forming a bond between said remaining portion and said third material, with a strength of at least 1000 mJ/m².

4. A method as recited in claim 1, comprising:

forming a bond between said remaining portion and said third material, with a strength of at least 2000 mJ/m².

5. A method as recited in claim 1, comprising:

annealing said remaining portion and said third material at a temperature in a range of about 75-100°

C. after forming said chemical bond.

6. A method as recited in claim 1, wherein:

said enhancing activation includes exposing to a fluorine containing species.

7. A method as recited in claim 1, wherein the other of said first and second bonding surfaces comprises silicon.

8. A method as recited in claim 1, comprising:

removing said second material.

9. A method as recited in claim 1, comprising polishing at least one of said first and second bonding surfaces.

10. A method as recited in claim 1, wherein said species comprises nitrogen.

11. A processing method, comprising:

bonding a first surface of a first element to a second surface of a second element;

removing a substantial portion of said first element to leave a remaining portion;

exposing a third surface of said remaining portion to a plasma to at least enhance activation of said third surface;

terminating said third surface with species capable of forming a chemical bond after exposure to said plasma;

bonding said third surface to a fourth surface of a third element after said terminating;

heating said remaining portion and said third element to a temperature no more than about 200°

C.; and

obtaining a bond strength of at least 500 mJ/m² between said remaining portion and said third element.

12. A method as recited in claim 11, comprising:

heating said remaining portion and said third element to a temperature no more than about 100°

C.

13. A method as recited in claim 11, comprising:

heating said remaining portion and said third element to a temperature no more than about 75-100°

C.

14. A method as recited in claim 11, wherein said exposing comprises etching said third surface such that a surface roughness of said third surface after said etching is substantially the same as a surface roughness of said third surface before said etching.

15. A method as recited in claim 11, wherein said species comprises nitrogen.

16. A method as recited in claim 11, wherein said species is fluorine-based.

17. A method as recited in claim 11, where said second element comprises silicon.

18. A method as recited in claim 11, comprising polishing at least one of said third and fourth bonding surfaces.

19. A bonding method, comprising:

bonding together a first element and a second element;

removing a substantial portion of said first element to leave a remaining portion;

forming a silicon oxide material on said remaining portion;

enhancing activation of a surface of said silicon oxide material using a plasma RIE process;

terminating said surface with species allowing formation of chemical bonds;

bringing together said silicon oxide material and a third element, after said enhancing activation and said terminating; and

forming a chemical bond with a strength of at least 500 mJ/m² between said remaining portion and said third element.

20. A method as recited in claim 19, comprising:

enhancing activation of a surface of said third element; and

bringing together said surface of said silicon oxide material and said surface of said third element after said enhancing activation of said surface of said third element.

21. A method as recited in claim 19, wherein enhancing activation of said surface of said silicon oxide material using said plasma RIE process comprises etching said silicon oxide material.

22. A method as recited in claim 21, wherein said etching comprises etching said silicon oxide material such that a surface roughness of said silicon oxide material after said etching is substantially the same as a surface roughness of said silicon oxide material before said etching.

23. A method as recited in claim 19, wherein:

a surface roughness of said silicon oxide material after said enhancing is substantially the same as a surface roughness of said silicon oxide material before said enhancing.

24. A method as recited in claim 19, comprising:

forming said bond at a temperature less than about 200°

C.

25. A method as recited in claim 19, comprising:

forming said bond at a temperature less than about 100°

C.

26. A method as recited in claim 19, comprising:

heating after said bringing together at a temperature in a range of about 75-100°

C.

27. A method as recited in claim 19, comprising:

forming said bond between said silicon oxide material and said third element, to a strength of at least 1000 mJ/m².

28. A method as recited in claim 19, comprising polishing at least one of said surfaces of silicon oxide material and said third element.

29. A method as recited in claim 19, wherein said species comprises nitrogen.

30. A bonded structure, comprising:

first and second materials having first and second bonding surfaces bonded together;

a third bonding surface of said first material having enhanced surface activation;

said third bonding surface terminated with species allowing formation of chemical bonds;

said third bonding surface bonded to a third material; and

a chemical bond formed between said first material and said third material after annealing said first and third materials at a temperature of no more than about 200°

C.;

at least one of third bonding surface and said third material comprising an insulating material.

31. A structure as recited in claim 30, wherein said species comprises nitrogen.

32. A method as recited in claim 30, wherein said species is fluorine-based.

33. A structure as recited in claim 30, wherein:

said third bonding surface comprises an insulating material; and

said third material comprises silicon.

34. A structure as recited in claim 33, wherein said insulating material comprises silicon oxide.

35. A structure as recited in claim 30, wherein said insulating material comprises silicon oxide.

36. A structure as recited in claim 30, wherein at least one of said third bonding surface and said third material comprises a polished surface.

37. A structure as recited claim 30, comprising:

said first bonding surface terminated with species allowing formation of chemical bonds below about 200°

C.

38. A structure as recited claim 30, comprising:

said first bonding surface terminated with species allowing formation of chemical bonds below about 100°

C.

39. A structure as recited claim 30, further comprising said chemical bond formed after storage at room temperature.

40. A structure as recited claim 30, further comprising said chemical bond formed after storage at ambient temperature.

41. A bonding method, comprising:

forming a silicon oxide material on a first element;

enhancing activation of a surface of said silicon oxide material using a plasma RIE process;

terminating said surface with a species capable of forming a chemical bond; and

bringing together said silicon oxide material and a second element, after said enhancing and terminating; and

forming a chemical bond between said silicon oxide material and said second element at a temperature below about 200°

C.

42. A method as recited in claim 41, comprising:

enhancing activation of a surface of said second element; and

bringing together said surface of said silicon oxide material and said surface of said second element after said enhancing activation of a surface of said silicon oxide material, enhancing activation of said surface of said second element and said terminating.

43. A method as recited in claim 41, wherein said enhancing activation of said surface of said silicon oxide material using said plasma RIE process comprises etching said silicon oxide material.

44. A method as recited in claim 43, wherein said etching comprises etching said silicon oxide material such that a surface roughness of said silicon oxide material after said etching is substantially the same as a surface roughness of said silicon oxide material before said etching.

45. A method as recited in claim 41, wherein:

a surface roughness of said silicon oxide material after said enhancing is substantially the same as a surface roughness of said silicon oxide material before said enhancing.

46. A method as recited in claim 41, comprising:

forming said bond between said silicon oxide material and said second element to a strength of at least 500 mJ/m².

47. A method as recited in claim 41, comprising:

forming said bond between said silicon oxide material and said second element to a strength of at least 1000 mJ/m².

48. A method as recited in claim 47, comprising:

forming said bond at a temperature less than about 100°

C.

49. A method as recited in claim 47, comprising:

heating after said bringing together at a temperature in a range of about 75-100°

C.

50. A method as recited in claim 41, comprising:

enhancing activation and terminating said surface in the same step.

51. A method as recited in claim 41, comprising:

terminating said surface after said enhancing activation.

52. A method as recited in claim 41, wherein said species comprises nitrogen.

53. A processing method, comprising:

exposing a first surface of a first element to a plasma to at least enhance activation of said first surface;

terminating said first surface with a species capable of forming a chemical bond with a bond strength of at least 500 mJ/m² without heating to a temperature more than about 200°

C.; and

bringing together said first surface and a second surface of a second element after said terminating; and

obtaining a chemical bond with a bond strength of at least 500 mJ/m².

54. A method as recited in claim 53, comprising:

heating said first and second elements to a temperature no more than about 100°

C.

55. A method as recited in claim 53, comprising:

heating said first and second elements to a temperature no more than about 75-100°

C.

56. A method as recited in claim 53, wherein said exposing comprises etching said first surface such that a surface roughness of said first surface after said etching is substantially the same as a surface roughness of said first surface before said etching.

57. A method as recited in claim 53, wherein said species comprises nitrogen.

58. A method as recited in claim 53, wherein said second element comprises silicon.

59. A method as recited claim 53, comprising:

performing said terminating after said exposing.

60. A method as recited claim 53, comprising:

performing said terminating and said exposing in a same step.

61. A method as recited in claim 53, comprising:

obtaining said chemical bond with a bond strength of at least 1000 mJ/m².

62. A method as recited claim 61, comprising:

performing said terminating and said exposing in a same step.

63. A method as recited in claim 61, wherein said species comprises nitrogen.

64. A method as recited in claim 53, comprising:

obtaining said chemical bond with a bond strength of at least 2000 mJ/m².

65. A method as recited claim 64, comprising:

performing said terminating and said exposing in a same step.

66. A method as recited in claim 64, wherein said species comprises nitrogen.

67. A method as recited in claim 53, wherein said first surface comprises an insulating material.

68. A method as recited in claim 67, comprising:

obtaining said chemical bond with a bond strength of at least 1000 mJ/m².

69. A method as recited in claim 68, wherein said species comprises nitrogen.

70. A method as recited claim 68, comprising:

performing said terminating and said exposing in a same step.

71. A method as recited in claim 67, comprising:

obtaining said chemical bond with a bond strength of at least 2000 mJ/m².

72. A method as recited in claim 71, wherein said species comprises nitrogen.

73. A method as recited claim 71, comprising:

performing said terminating and said exposing in a same step.

74. A method as recited in claim 53, wherein said first surface comprises silicon oxide.

75. A method as recited in claim 74, comprising:

obtaining said chemical bond with a bond strength of at least 1000 mJ/m².

76. A method as recited in claim 75, wherein said species comprises nitrogen.

77. A method as recited claim 75, comprising:

performing said terminating and said exposing in a same step.

78. A method as recited in claim 74, comprising:

obtaining said chemical bond with a bond strength of at least 2000 mJ/m².

79. A method as recited in claim 78, wherein said species comprises nitrogen.

80. A method as recited claim 78, comprising:

performing said terminating and said exposing in a same step.

81. A method as recited claim 53, comprising:

terminating said first surface with a species capable of forming a chemical bond with a bond strength of at least 500 mJ/m² without heating to a temperature more than about 100°

C.

82. A method as recited in claim 53, wherein:

said first surface comprises silicon oxide; and

said second surface comprises a surface of a silicon substrate.

83. A method as recited in claim 53, comprising:

bringing together said first and second surfaces in ambient.

84. A method as recited in claim 83, wherein said exposing comprises etching said first surface such that a surface roughness of said first surface after said etching is substantially the same as a surface roughness of said first surface before said etching.

85. A method as recited claim 83, comprising:

performing said terminating and said exposing in a same step.

86. A method as recited in claim 83, comprising:

obtaining said chemical bond with a bond strength of at least 1000 mJ/m².

87. A method as recited in claim 83, comprising:

obtaining said chemical bond with a bond strength of at least 2000 mJ/m².

88. A method as recited in claim 83, comprising:

heating said first and second elements to a temperature no more than about 75-100°

C.

89. A method as recited in claim 83, wherein said species comprises nitrogen.

90. A method as recited in claim 83, wherein:

said first surface comprises silicon oxide; and

said second surface comprises a surface of a silicon substrate.

91. A method as recited in claim 83, comprising:

polishing said first element to produce said first surface.

92. A method as recited claim 83, comprising:

after said bringing together, storing said wafers in ambient.

93. A method as recited in claim 83, wherein said species is capable of forming a chemical bond with a strength of at least 500 mJ/m² at less than about 100°

C.

94. A method as recited in claim 83, wherein said species is capable of forming a chemical bond with a strength of at least 500 mJ/m² at about room temperature.

95. A bonded structure, comprising:

a first material having a first bonding surface;

a second material having a second bonding surface;

said first bonding surface having enhanced surface activation;

said first bonding surface terminated with species allowing formation of chemical bonds of a strength of at least 500 mJ/m² at a temperature of no more than about 200°

C.; and

a chemical bond formed between said first material and said second material.

96. A structure as recited in claim 95, comprising:

said first bonding surface terminated with species allowing formation of chemical bonds of a strength of at least 500 mJ/m² at a temperature of no more than about 100°

C.

97. A structure as recited in claim 95, wherein said species comprises nitrogen.

98. A structure as recited in claim 95, wherein said second material comprises silicon.

99. A structure as recited in claim 95, comprising:

a chemical bond formed between said first material and said second material with a strength of at least 1000 mJ/m².

100. A structure as recited in claim 99, wherein said species comprises nitrogen.

101. A structure as recited in claim 95, comprising:

a chemical bond formed between said first material and said second material with a strength of at least 2000 mJ/m².

102. A structure as recited in claim 101, wherein said species comprises nitrogen.

103. A structure as recited in claim 95, wherein said first bonding surface comprises an insulating material.

104. A structure as recited in claim 103, comprising:

a chemical bond formed between said first material and said second material with a strength of at least 1000 mJ/m².

105. A structure as recited in claim 104, wherein said species comprises nitrogen.

106. A structure as recited in claim 105, comprising:

a chemical bond formed between said first material and said second material with a bond strength of at least 2000 mJ/m².

107. A structure as recited in claim 106, wherein said species comprises nitrogen.

108. A structure as recited in claim 95, wherein said first bonding surface comprises silicon oxide.

109. A structure as recited in claim 108, comprising:

a chemical bond formed between said first material and said second material with a strength of at least 1000 mJ/m².

110. A structure as recited in claim 109, wherein said species comprises nitrogen.

111. A structure as recited in claim 108, comprising:

a chemical bond formed between said first material and said second material with a strength of at least 2000 mJ/m².

112. A structure as recited in claim 111, wherein said species comprises nitrogen.