Three-dimensional integrated circuits with protection layers

• US 7,812,459 B2
• Filed: 12/19/2006
• Issued: 10/12/2010
• Est. Priority Date: 12/19/2006
• Status: Active Grant

• Current Assignee: Advanced Manufacturing Innovations Incorporated
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chen-Hua, Tu, Hung-Jung, Chiou, Wen-Chih, Wu, Weng-Jin, Yang, Ku-Feng
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US11/641,324
• Publication Number:
  US 20080142990A1
• Time in Patent Office: 1,393 Days
• Field of Search: 438/108, 438/109, 438/456, 257/686, 257/777, 257/E23.01, 257/E23.023, 257/E23.133, 257/E21.511
• US Class Current: 257/778
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05157 Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05609 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/05616 Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0688 : Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: Y10S 148/164 : Three dimensional processing

Abstract

A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

Claims

1. A semiconductor structure comprising:

a first die comprising;

a first substrate; and

a first bonding pad over the first substrate;

a second die having a first surface and a second surface opposite the first surface, wherein the second die comprises a second bonding pad on the first surface and bonded to the first bonding pad of the first die through flip-chip bonding, and wherein the first die and the second die have a gap therebetween; and

a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die, wherein the protection layer seals the gap between the first die and the second die.

2. The semiconductor structure of claim 1 further comprising a coating on the horizontal portion of the protection layer and in a region defined by the vertical portion and the horizontal portion of the protection layer.

3. The semiconductor structure of claim 2, wherein a top edge of the vertical portion of the protection layer is substantially level with a top surface of the coating.

4. The semiconductor structure of claim 1, wherein the protection layer comprises a material selected from the group consisting essentially of diamond film, amorphous carbon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon oxycarbide, and combinations thereof.

5. The semiconductor structure of claim 1, wherein the protection layer is formed on all sidewalls of the second die, and encircles the second die.

6. The semiconductor structure of claim 1, wherein the protection layer has a thickness of between about 50 Å

and about 2000 Å

.

7. The semiconductor structure of claim 1, wherein the first die further comprises an active device in the first substrate and an interconnect structure over the first substrate, wherein the interconnect structure is connected to the first bonding pad.

8. The semiconductor structure of claim 1, wherein the first die is free from active devices.

9. The semiconductor structure of claim 1 further comprising a third die stacked on the second die, and an additional protection layer on a sidewall of the third die and extending over the second die.

10. The semiconductor structure of claim 1 further comprising a third die stacked on the first die, wherein the protection layer is on a sidewall of the third die and extending over the first die.

11. The semiconductor structure of claim 1, wherein the second die comprises:

a second substrate;

an active device in the second substrate;

an interconnect structure over the second substrate, wherein the second bonding pad is electrically coupled to the interconnect structure;

and

a contact pad on the second surface and electrically connected to the second bonding pad.

12. The semiconductor structure of claim 11 further comprising a through-silicon via in the second substrate and electrically interconnecting the second bonding pad and the contact pad of the second die.