Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
First Claim
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1. A method of operating a multi-level non-volatile memory device comprising:
- accessing data, stored in the device, that is associated with read voltages; and
modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device, wherein modifying comprises;
applying a range of preliminary read voltages to a word line, associated with the cells, between an upper read voltage limit for a first state and a lower read voltage limit for a second state that is immediately adjacent to the first state;
determining which of the preliminary read voltages activated a minimum number of the plurality of multi-level non-volatile memory cells to provide a read voltage to discriminate between the first and second states; and
applying the read voltage to the word line to read the plurality of multi-level non-volatile memory cells to execute the read command.
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Abstract
Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
32 Citations
17 Claims
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1. A method of operating a multi-level non-volatile memory device comprising:
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accessing data, stored in the device, that is associated with read voltages; and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device, wherein modifying comprises; applying a range of preliminary read voltages to a word line, associated with the cells, between an upper read voltage limit for a first state and a lower read voltage limit for a second state that is immediately adjacent to the first state; determining which of the preliminary read voltages activated a minimum number of the plurality of multi-level non-volatile memory cells to provide a read voltage to discriminate between the first and second states; and applying the read voltage to the word line to read the plurality of multi-level non-volatile memory cells to execute the read command. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of operating a multi-level non-volatile memory device comprising:
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receiving a read operation to read data from a plurality of multi-level non-volatile memory cells associated with a word line; applying a range of preliminary read voltages to the word line between an upper read voltage limit for a first state and a lower read voltage limit for a second state that is immediately adjacent to the first state; determining which of the preliminary read voltages activated a minimum number of the plurality of multi-level non-volatile memory cells to provide a read voltage to discriminate between the first and second states; and applying the read voltage to the word line to read the plurality of multi-level non-volatile memory cells to execute the read operation. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A non-volatile memory device comprising:
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an array of multi-level non-volatile memory cells associated with respective word lines; a high voltage generator circuit configured to provide a read voltage to the array of multi-level non-volatile memory cells via the respective word lines during a read operation; a row decoder circuit configured to provide a row address to the array of multi-level non-volatile memory cells during the read operation; a column gating circuit configured to receive read data from cells in the array of multi-level non-volatile memory cells addressed by the row address during the read operation responsive to a column address; and a read voltage adjustment circuit configured to modify the read voltage applied to addressed ones of the cells to discriminate between states stored by the cells in response to the read operation to the non-volatile memory device, wherein the read voltage adjustment circuit is further configured to read data from the addressed cells using an addressed word line and configured to apply a range of preliminary read voltages to the word line between an upper read voltage limit for a first state and a lower read voltage limit for a second state that is immediately adjacent to the first state and configured to determine which of the preliminary read voltages activated a minimum number of the plurality of multi-level non-volatile memory cells to provide a read voltage to discriminate between the first and second states; and wherein the high voltage generator circuit is further configured to apply the read voltage to the addressed word line to read the plurality of multi-level non-volatile memory cells to execute the read operation. - View Dependent Claims (16, 17)
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Specification