Stacked semiconductor device
First Claim
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1. A stacked semiconductor device, comprising:
- a circuit base having an element mounting part and a connection part;
a first semiconductor element bonded on the element mounting part of the circuit base;
a second semiconductor element bonded on the first semiconductor element via an adhesive layer with a thickness of 50 μ
m or more,wherein the adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135°
C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less and greater than zero ppm;
an electrode pad formed on the first semiconductor element and electrically connected to the connection part via a bonding wire, the electrode pad projecting from an upper face of the first semiconductor element, and an upper end of the electrode pad being in the adhesive layer; and
a sealing resin formed on the circuit base to seal the first and second semiconductor elements together with the bonding wire,wherein a tensile stress acting on the first or second semiconductor element due to the adhesive layer during a thermal cycle test is 300 MPa or less and greater than zero MPa.
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Abstract
A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer with a thickness of 50 μm or more. The second adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135° C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less.
11 Citations
12 Claims
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1. A stacked semiconductor device, comprising:
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a circuit base having an element mounting part and a connection part; a first semiconductor element bonded on the element mounting part of the circuit base; a second semiconductor element bonded on the first semiconductor element via an adhesive layer with a thickness of 50 μ
m or more,wherein the adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135°
C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less and greater than zero ppm;an electrode pad formed on the first semiconductor element and electrically connected to the connection part via a bonding wire, the electrode pad projecting from an upper face of the first semiconductor element, and an upper end of the electrode pad being in the adhesive layer; and a sealing resin formed on the circuit base to seal the first and second semiconductor elements together with the bonding wire, wherein a tensile stress acting on the first or second semiconductor element due to the adhesive layer during a thermal cycle test is 300 MPa or less and greater than zero MPa. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification