Metallization structure over passivation layer for IC chip

• US 8,067,837 B2
• Filed: 06/17/2005
• Issued: 11/29/2011
• Est. Priority Date: 09/20/2004
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung
• Primary Examiner(s): Fahmy; Wael M
• Assistant Examiner(s): SALERNO, SARAH KATE
• Application Number:
  US11/157,186
• Publication Number:
  US 20060125094A1
• Time in Patent Office: 2,356 Days
• Field of Search: 257/737, 257/758, 257/777, 257/698
• US Class Current: 257/758
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06051 Bonding areas having different shapes
• CPC Class Codes: H01L 2224/06167 with specially adapted redistribution layers [RDL]
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/16106 the bump connector connecting one bonding area to at least two respective bonding areas
• CPC Class Codes: H01L 2224/81805 involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 24/14 of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

A semiconductor chip suited for being electrically connected to a circuit element includes a line and a bump. The bump is connected to the line and is adapted to be electrically connected to the line. A plane that is horizontal to an active surface of the semiconductor chip is defined. The area that the connection region of the line and the bump is projected on the plane is larger than 30,000 square microns or has an extension distance larger than 500 microns.

Claims

1. A chip package comprising:

a semiconductor chip comprising a silicon substrate, a transistor in or on said silicon substrate, a first metallization structure over said silicon substrate, wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a dielectric layer between said first and second metal layers, a separating layer over said silicon substrate, said first metallization structure and said dielectric layer, wherein said separating layer comprises silicon nitride, wherein a first opening in said separating layer is over a contact point of said first metallization structure, and said contact point is at a bottom of said first opening, a first polymer layer on said separating layer, wherein a second opening in said first polymer layer is over said contact point, and a second metallization structure on said contact point, on a sidewall of said first opening, on a sidewall of said second opening and on a top surface of said first polymer layer, wherein said second metallization structure contacts said contact point, said sidewall of said first opening, said sidewall of said second opening and said top surface of said first polymer layer, wherein said second metallization structure is connected to said contact point through said first and second openings, wherein said second metallization structure comprises an electroplated copper layer having a thickness greater than 3 micrometers;

a circuit substrate;

a tin-containing joint between said second metallization structure and a metal contact of said circuit substrate, vertically over said contact point and vertically over said top surface of said first polymer layer, wherein said second metallization structure is connected to said metal contact through said tin-containing joint; and

a second polymer layer between said semiconductor chip and said circuit substrate, wherein said second polymer layer contacts said semiconductor chip and said circuit substrate, wherein said second polymer layer covers a sidewall of said tin-containing joint, wherein said second metallization structure has a sidewall with a region not covered by said tin-containing joint but covered by said second polymer layer.

2. The chip package of claim 1, wherein a contact area between said metal contact and said tin-containing joint is greater than 80,000 μ

m².

3. The chip package of claim 1, wherein said circuit substrate comprises a printed circuit board.

4. The chip package of claim 1, wherein said second metallization structure further comprises a titanium-containing layer under said electroplated copper layer.

5. The chip package of claim 1, wherein said second metallization structure further comprises a titanium-tungsten-alloy layer under said electroplated copper layer.

6. The chip package of claim 1, wherein said tin-containing joint comprises a portion in a third opening in a solder mask of said circuit substrate.

7. The chip package of claim 1, wherein said tin-containing joint comprises silver.

8. The chip package of claim 1, wherein said tin-containing joint comprises silver and copper.

9. The chip package of claim 1, wherein said first polymer layer has a thickness greater than 1 micrometer.

10. The chip package of claim 1, wherein said first polymer layer comprises polyimide.

11. The chip package of claim 1, wherein said first polymer layer comprises benzocyclobutence (BCB).

12. A chip package comprising:

a semiconductor chip comprising a silicon substrate, a transistor in or on said silicon substrate, a first metallization structure over said silicon substrate, wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a dielectric layer between said first and second metal layers, a separating layer over said silicon substrate, said first metallization structure and said dielectric layer, wherein said separating layer comprises an insulating nitride, wherein a first opening in said separating layer is over a contact point of said first metallization structure, and said contact point is at a bottom of said first opening, a first polymer layer on said separating layer, wherein a second opening in said first polymer layer is over said contact point, and a second metallization structure on said contact point, on a sidewall of said first opening, on a sidewall of said second opening and on a top surface of said first polymer layer, wherein said second metallization structure contacts said contact point, said sidewall of said first opening, said sidewall of said second opening and said top surface of said first polymer layer, wherein said second metallization structure is connected to said contact point through said first and second openings, wherein said second metallization structure comprises an electroplated copper layer having a thickness greater than 3 micrometers and a nickel-containing layer on a top of said electroplated copper layer;

a circuit substrate;

a tin-containing joint between said second metallization structure and a metal contact of said circuit substrate, vertically over said contact point and vertically over said top surface of said first polymer layer, wherein said second metallization structure is connected to said metal contact through said tin-containing joint; and

a second polymer layer between said semiconductor chip and said circuit substrate, wherein said second polymer layer contacts said semiconductor chip and said circuit substrate, wherein said second polymer layer covers a sidewall of said tin-containing joint, wherein said second metallization structure has a sidewall with a region not covered by said tin-containing joint but covered by said second polymer layer.

13. The chip package of claim 12, wherein said nickel-containing layer is electroplated.

14. The chip package of claim 12, wherein said second metallization structure further comprises a titanium-containing layer under said electroplated copper layer.

15. The chip package of claim 12, wherein said second metallization structure further comprises a titanium-tungsten-alloy layer under said electroplated copper layer.

16. The chip package of claim 12, wherein said first polymer layer has a thickness greater than 1 micrometer.

17. The chip package of claim 12, wherein said tin-containing joint comprises silver.

18. The chip package of claim 12, wherein said tin-containing joint comprises silver and copper.

19. A chip package comprising:

a semiconductor chip comprising a semiconductor substrate, a first metallization structure over said semiconductor substrate, wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a dielectric layer between said first and second metal layers, a separating layer over said semiconductor substrate, said first metallization structure and said dielectric layer, wherein an opening in said separating layer is over a contact point of said first metallization structure, and said contact point is at a bottom of said opening, and a second metallization structure on said contact point, wherein said second metallization structure is connected to said contact point through said opening, wherein said second metallization structure comprises an electroplated copper layer having a thickness greater than 3 micrometers;

a circuit substrate; and

a tin-containing joint between said second metallization structure and a metal contact of said circuit substrate and vertically over said contact point, wherein said second metallization structure is connected to said metal contact through said tin-containing joint, wherein a contact area between said metal contact and said tin-containing joint is greater than 80,000 μ

m².

20. The chip package of claim 19, wherein said second metallization structure further comprises a titanium-containing layer under said electroplated copper layer.

21. The chip package of claim 19, wherein said tin-containing joint comprises silver.

22. The chip package of claim 19, wherein said separating layer comprises a nitride.

23. The chip package of claim 19 further comprising a polymer layer between said semiconductor chip and said circuit substrate, wherein said polymer layer contacts said semiconductor chip and said circuit substrate, wherein said polymer layer covers a sidewall of said tin-containing joint, wherein said second metallization structure has a sidewall with a region not covered by said tin-containing joint but covered by said polymer layer.