Semiconductor device and method for manufacturing same

  • US 8,178,913 B2
  • Filed: 12/08/2010
  • Issued: 05/15/2012
  • Est. Priority Date: 02/22/2008
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a first-conductivity-type region formed in an upper portion of the semiconductor substrate and having a first conductivity type;

    a second-conductivity-type region formed in the upper portion of the semiconductor substrate, in contact with the first-conductivity-type region, and having a second conductivity type that is different from the first conductivity type;

    a buried dielectric film provided immediately above the second-conductivity-type region, the buried dielectric film having a lower portion buried in the semiconductor substrate and an upper portion protruding from an upper surface of the semiconductor substrate, a lower surface of the buried dielectric film being at a level higher than a lower surface of the first-conductive-type region; and

    an element isolation film having a lower portion buried in the semiconductor substrate, having an upper portion protruding from the upper surface of the semiconductor substrate, and having a lower surface located below a lower surface of the buried dielectric film,wherein the second-conductivity-type region and the buried dielectric film are in contact with the first-conductivity-type region and isolate the first-conductivity-type region from a region that is on opposite side of the first-conductivity-type region across the second-conductivity-type region and is in contact with the second-conductivity-type region.

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