Electronic device, method of manufacturing the same, display and sensor

• US 8,222,158 B2
• Filed: 07/08/2010
• Issued: 07/17/2012
• Est. Priority Date: 07/09/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Mochizuki, Fumihiko, Tanaka, Atsushi
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US12/832,077
• Publication Number:
  US 20110006300A1
• Time in Patent Office: 740 Days
• Field of Search: 257/E21.223, 438/733, 438/745, 438/754
• US Class Current: 438/733
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A method of manufacturing an electronic device includes: preparing a film-attached substrate including a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.

Claims

1. A method of manufacturing an electronic device comprising:

preparing a film-attached substrate comprising a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and

wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.

2. The method of manufacturing an electronic device according to claim 1, wherein the substrate comprises a resin substrate.

3. The method of manufacturing an electronic device according to claim 1, wherein the oxide semiconductor film comprises an amorphous oxide semiconductor film.

4. The method of manufacturing an electronic device according to claim 1, wherein an oxide semiconductor in the oxide semiconductor film comprises a compound represented by the following Formula (I):

(In_2-XGa_X)O₃.(ZnO)_m 

 

Formula (I)

wherein, in Formula (I), X represents a number of from more than 0 to less than 2, and m represents a positive integer.

5. The method of manufacturing an electronic device according to claim 1, wherein the oxide semiconductor film is formed by a vapor phase film forming method.

6. The method of manufacturing an electronic device according to claim 1, wherein the content of hydrogen peroxide in the etching liquid is 80% by mass or higher with respect to all the components, excluding solvents, of the etching liquid.

7. An electronic device manufactured by the method of manufacturing an electronic device according to claim 1.

8. The electronic device according to claim 7, wherein the electronic device is a thin film transistor.

9. A display equipped with the electronic device according to claim 7.

10. A sensor equipped with the electronic device according to claim 7.