Memory cell with a channel buried beneath a dielectric layer
First Claim
1. A memory cell comprising:
- a semiconductor-on-insulator (SeOI) substrate including a thin layer of semiconductor material separated from a base substrate by an insulating layer; and
an FET transistor including a source region and a drain region that are arranged at least essentially in the thin layer of the SeOI substrate, a channel in which a trench is made, and a gate region in the trench,wherein the trench extends into the depth of the base substrate beyond the insulating layer, andwherein the channel extends between the source region and the drain region at least essentially beneath the insulating layer.
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Accused Products
Abstract
The invention provides various embodiments of a memory cell formed on a semiconductor-on-insulator (SeOI) substrate and comprising one or more FET transistors. Each FET transistor has a source region and a drain region at least portions of which are arranged in the thin layer of the SeOI substrate, a channel region in which a trench is made, and a gate region formed in the trench. Specifically, the source, drain and channel regions also have portions which are arranged also beneath the insulating layer of the SeOI substrate; the portion of channel region beneath the insulating layer extends between the portions of the source and drain regions also beneath the insulating layer; and the trench in the channel region extends into the depth of the base substrate beyond the insulating layer. Also, methods for fabricating such memory cells and memory arrays including a plurality of such memory cells.
83 Citations
22 Claims
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1. A memory cell comprising:
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a semiconductor-on-insulator (SeOI) substrate including a thin layer of semiconductor material separated from a base substrate by an insulating layer; and an FET transistor including a source region and a drain region that are arranged at least essentially in the thin layer of the SeOI substrate, a channel in which a trench is made, and a gate region in the trench, wherein the trench extends into the depth of the base substrate beyond the insulating layer, and wherein the channel extends between the source region and the drain region at least essentially beneath the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification