Gallium nitride semiconductor structures with compositionally-graded transition layer

CAFC
  • US 8,344,417 B2
  • Filed: 01/27/2012
  • Issued: 01/01/2013
  • Est. Priority Date: 12/14/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor structure comprising:

  • a transition layer over a silicon substrate;

    a gallium nitride material layer over said transition layer;

    wherein a composition of said transition layer at a top surface thereof substantially matches a composition of said gallium nitride material layer at a bottom surface thereof.

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