Semiconductor device

• US 8,546,912 B2
• Filed: 04/05/2012
• Issued: 10/01/2013
• Est. Priority Date: 03/12/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Arao, Tatsuya
• Primary Examiner(s): SMITH, BRADLEY
• Application Number:
  US13/440,157
• Publication Number:
  US 20120187457A1
• Time in Patent Office: 544 Days
• Field of Search: 257/531
• US Class Current: 257/531
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07775 the antenna being on-chip
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01Q 1/2208 associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems methods or arrangements for sensing record carriers, e.g. for reading patterns G06K7/00; record carrier for use with machines and with at least a part designed to carry digital markings G06K19/00
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them

Abstract

A semiconductor device such as an ID chip of the present invention includes an integrated circuit using a semiconductor element formed by using a thin semiconductor film, and an antenna connected to the integrated circuit. It is preferable that the antenna is formed integrally with the integrated circuit, since the mechanical strength of an ID chip can be enhanced. Note that the antenna used in the present invention also includes a conducting wire that is wound round circularly or spirally and fine particles of a soft magnetic material are arranged between the conducting wires. Specifically, an insulating layer in which fine particles of a soft magnetic material are arranged between the conducting wires. Specifically, an insulating layer in which fine particles of a soft magnetic material are included is arranged between the conducting wires.

Claims

1. A semiconductor device comprising:

a substrate;

a first metal layer over the substrate;

an insulating layer over the first metal layer;

a resin, over the insulating layer; and

a second metal layer over the resin,

wherein fine particles of a soft magnetic material are included in the resin,

wherein the second metal layer is electrically connected to the first metal layer through a contact hole of the insulating layer and the resin, and

wherein the first metal layer is electrically connected to a semiconductor.

2. A semiconductor device according to claim 1,

wherein the substrate is a glass substrate.

3. A semiconductor device according to claim 1,

wherein a thin film transistor comprises the semiconductor.

4. The semiconductor device according to claim 1,

wherein the soft magnetic material is Fe;

Co;

Ni;

an alloy including at least one of Fe, Co, and Ni;

3Y₂O₃·

5Fe₂O₃ (YIG);

Fe₂O₃;

Fe—

Si—

Al alloy;

Fe—

Cr alloy;

FeP alloy;

a permalloy in which Ni or Ni—

Fe alloy is added with at least one of Mo, Cu, Cr, and Nb;

or a soft ferrite.

5. The semiconductor device according to claim 1, further comprising:

a second insulating layer over the second metal layer.

6. A semiconductor device comprising:

a substrate;

a metal layer over the substrate;

an insulating layer over the metal layer;

a resin, over the insulating layer; and

an antenna over the resin,

wherein fine particles of a soft magnetic material are included in the resin,

wherein the antenna is electrically connected to the metal layer through a contact hole of the insulating layer and the resin, and

wherein the metal layer is electrically connected to a semiconductor.

7. A semiconductor device according to claim 6,

wherein the substrate is a glass substrate.

8. A semiconductor device according to claim 6,

wherein a thin film transistor comprises the semiconductor.

9. The semiconductor device according to claim 6,

wherein the soft magnetic material is Fe;

Co;

Ni;

an alloy including at least one of Fe, Co, and Ni;

3Y₂O₃·

5Fe₂O₃ (YIG);

Fe₂O₃;

Fe—

Si—

Al alloy;

Fe—

Cr alloy;

FeP alloy;

a permalloy in which Ni or Ni—

Fe alloy is added with at least one of Mo, Cu, Cr, and Nb;

or a soft ferrite.

10. The semiconductor device according to claim 6, further comprising:

a second insulating layer over the antenna.

11. A semiconductor device comprising:

a substrate;

a first metal layer and over the substrate;

an insulating layer over the first metal layer;

a first resin over the insulating layer;

a second metal layer over the first resin; and

a second resin over the second metal layer,

wherein first fine particles of a first soft magnetic material are included in the first resin,

wherein second fine particles of a second soft magnetic material are included in the second resin,

wherein the second metal layer is electrically connected to the first metal layer through a contact hole of the insulating layer and the first resin, and

wherein the first metal layer is electrically connected to a semiconductor.

12. A semiconductor device according to claim 11,

wherein the substrate is a glass substrate.

13. A semiconductor device according to claim 11,

wherein a thin film transistor comprises the semiconductor.

14. The semiconductor device according to claim 11,

wherein each of the first soft magnetic material and the second soft magnetic material is Fe;

Co;

Ni;

an alloy including at least one of Fe, Co, and Ni;

3Y₂O₃·

5Fe₂O₃ (YIG);

Fe₂O₃;

Fe—

Si—

Al alloy;

Fe—

Cr alloy;

FeP alloy;

a permalloy in which Ni or Ni—

Fe alloy is added with at least one of Mo, Cu, Cr, and Nb;

or a soft ferrite.

15. The semiconductor device according to claim 11,

wherein the first soft magnetic material is a same material as the second soft magnetic material.

16. The semiconductor device according to claim 11, further comprising:

a second insulating layer over the second metal layer.