Semiconductor electronic device with an integrated device with an integrated galvanic isolator element and related assembly process
First Claim
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1. An electronic device, comprising:
- a first electronic circuit integrated in a first die;
a second electronic circuit integrated in a second die; and
a galvanic isolator element positioned on, and entirely supported by, the first die, the galvanic isolator element being configured to insulate galvanically, and to enable transfer of signals between, said first and second electronic circuits, wherein said galvanic isolator element comprises;
a transformer substrate distinct from said first die and said second die;
a first inductive element integrated in said first die; and
a second inductive element integrated in said transformer substrate and configured to be operatively coupled to said first inductive element.
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Abstract
An electronic device is provided with: a first electronic circuit, integrated in a first die; a second electronic circuit, integrated in a second die; and a galvanic isolator element, designed to insulate galvanically, and to enable transfer of signals between, the first electronic circuit and the second electronic circuit. The galvanic isolator element has: a transformer substrate, distinct from the first die and from the second die; and a galvanic-insulation transformer formed by a first inductive element, integrated in the first die, and by a second inductive element, integrated in the transformer substrate and so arranged as to be magnetically coupled to the first inductive element.
35 Citations
20 Claims
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1. An electronic device, comprising:
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a first electronic circuit integrated in a first die; a second electronic circuit integrated in a second die; and a galvanic isolator element positioned on, and entirely supported by, the first die, the galvanic isolator element being configured to insulate galvanically, and to enable transfer of signals between, said first and second electronic circuits, wherein said galvanic isolator element comprises; a transformer substrate distinct from said first die and said second die; a first inductive element integrated in said first die; and a second inductive element integrated in said transformer substrate and configured to be operatively coupled to said first inductive element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An electronic device, comprising:
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a first electronic circuit integrated in a first semiconductor die; a second electronic circuit integrated in a second semiconductor die; and a galvanic isolator element positioned on, and entirely supported by, the first semiconductor die, the galvanic isolator element being configured to insulate galvanically, and to enable transfer of signals between, said first and second electronic circuits, wherein said galvanic isolator element comprises; a transformer substrate distinct from said first semiconductor die and said second semiconductor die, the transformer substrate being vertically aligned with the first semiconductor die and laterally spaced apart from the second semiconductor die; a first inductive element integrated in said first semiconductor die; and a second inductive element integrated in said transformer substrate and configured to be operatively coupled to, and vertically aligned with, said first inductive element. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A packaged electronic device, comprising:
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a package; a first electronic circuit integrated in a first semiconductor die; a second electronic circuit integrated in a second semiconductor die, the first and second semiconductor dies being positioned within the package; and a galvanic isolator element positioned on, and entirely supported by, the first semiconductor die, the galvanic isolator element being positioned within the package and configured to insulate galvanically, and to enable transfer of signals between, said first and second electronic circuits, wherein said galvanic isolator element comprises; a transformer substrate distinct from said first semiconductor die and said second semiconductor die, the transformer substrate being vertically aligned with the first semiconductor die; a first inductive element integrated in said first semiconductor die; and a second inductive element integrated in said transformer substrate, the second inductive element being electrically coupled to the second electronic circuit and configured to be operatively coupled to, and vertically aligned with, said first inductive element. - View Dependent Claims (19, 20)
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Specification