Parasitic capacitance cancellation in capacitive measurement applications

• US 8,659,306 B2
• Filed: 10/15/2009
• Issued: 02/25/2014
• Est. Priority Date: 10/15/2008
• Status: Active Grant

• Current Assignee: Azoteq Holdings Limited
• Original Assignee: Azoteq Pty Ltd.
• Inventors: Bruwer, Frederick Johannes, Swanepoel, Nico Johann, Van Der Merwe, Douw Gerbrandt, Mellet, Dieter Sydney-Charles
• Primary Examiner(s): NGUYEN, HOAI AN D
• Application Number:
  US13/061,144
• Publication Number:
  US 20110148440A1
• Time in Patent Office: 1,594 Days
• Field of Search: 324/684, 324/658, 324/600, 324/686, 324/678, 324/679, 324/649
• US Class Current: 324/684
• CPC Class Codes: G01D 5/24 by varying capacitance
• CPC Class Codes: G01D 5/2417 by varying separation
• CPC Class Codes: G01R 27/2605 Measuring capacitance capacitive sensors G01D5/24
• CPC Class Codes: G01R 27/2611 Measuring inductance
• CPC Class Codes: H03K 17/955 using a capacitive detector
• CPC Class Codes: H03K 2217/960725 Charge-transfer

Abstract

An integrated circuit for compensating for parasitic capacitance in a capacitive measuring apparatus wherein a capacitance measurement is done by repeatedly transferring charge from a capacitor to be measured to a reference capacitor.

Claims

1. An integrated circuit for measuring capacitance of a sense plate structure, said integrated circuit comprising:

a reference capacitor;

means for periodically applying a fixed charging voltage to said sense plate structure;

a charge transfer circuit for periodically charging said reference capacitor, said charge transfer circuit including at least one current mirror structure having an input for receiving a current from said sense plate structure and generating an output current that is a scaled version of said input current;

a switch for periodically connecting said sense plate structure to said current mirror input, wherein the periodic charging of the sense plate structure, charging said reference capacitor and connecting the sense plate to the current mirror input form a charge transfer cycle; and

means for determining the capacitance of said sense plate based on the accumulated amount of charge in the reference capacitor.

2. The integrated circuit of claim 1 wherein means are provided to remove a pre-determined amount of charge from said reference capacitor during every charge transfer cycle.

3. The integrated circuit of claim 2 further comprising at least a second current mirror structure for scaling the charge removed from said reference capacitor.

4. The integrated circuit of claim 3 wherein a number of on-chip selectable capacitors is provided, the selection of which determines the amount of charge removed.

5. The integrated circuit of claim 2 wherein means for selecting a reference current from multiple reference currents is provided, wherein said selection determines the amount of charge removed.

6. The integrated circuit of claim 1 wherein a number of on-chip capacitors is provided, each of which can be selected to accumulate a charge which reflects an amount of charge that has been transferred from said sense plate structure, and wherein said selection may be performed according to an algorithm which optimizes the capacitive measurement system for sensitivity, stability or speed.

7. The integrated circuit of claim 2 wherein a number of on-chip capacitors is provided, each of which can be selected to accumulate a charge which reflects an amount of charge that has been transferred from said sense plate structure, and wherein said selection may be performed according to an algorithm which optimizes the capacitive measurement system for sensitivity, stability or speed.

8. The integrated circuit of claim 1 wherein the current mirror structure includes a selection of scaling ratios that can be selected in accordance with an algorithm to optimize the capacitive measurement system for sensitivity, stability or speed.

9. The integrated circuit of claim 1 wherein the circuit is implemented in silicon and further includes a noise detection circuit for detecting noise present in the silicon and wherein an output of said noise detection circuit is provided for reducing the effect of such noise on the functionality of said integrated circuit.

10. A method of adjusting the number of charge transfer cycles in a capacitive measurement circuit, wherein said circuit includes a sense plate structure, an integrated circuit with an on-chip reference capacitor, one or more current mirror structures contained by said integrated circuit, said current mirror structures used to scale charge effectively flowing from said sense plate structure to said reference capacitor, and wherein said method comprises the steps of:

periodically charging said sense plate structure with a known voltage;

periodically transferring charge from said sense plate structure to said reference capacitor;

utilizing said one or more current mirror structures to scale the amount of charge flowing from the sense plate structure to the reference capacitor; and

adjusting the number of charge transfer cycles through a selection of ratios for said current mirror structures.

11. The method of claim 10 which further includes the steps of detecting noise by using a measurement circuit for noise that is not influenced by the capacitance of an object proximate or touching the sense plate structure and using information which is dependent on the detection of such noise to reduce the effect of the noise on the operation of the capacitive measurement circuit.

12. A method of adjusting the amount of charge removed during compensation for parasitic capacitance in a capacitive measurement circuit, wherein said circuit includes a sense plate structure, an integrated circuit with an on-chip reference capacitor and one or more current mirror structures used to scale charge which is removed from said reference capacitor, and wherein said method comprises the steps of:

periodically charging said sense plate structure with a known voltage;

periodically transferring charge from said sense plate structure to said reference capacitor;

periodically removing an amount of charge from said reference capacitor;

utilizing said one or more current mirror structures to scale said amount of charge removed from said reference capacitor; and

adjusting the amount of charge removed through a selection of ratios for said current mirror structures.

13. The method of claim 12 which further includes the steps of detecting noise by using a measurement circuit for noise that is not influenced by the capacitance of an object proximate or touching the sense plate structure and using information which is dependent on the detection of such noise to reduce the effect of the noise on the operation of the capacitive measurement circuit.