Magnetoresistive random access memory
First Claim
1. A method of forming a magnetic random access memory (MRAM) device, comprising:
- forming at least one write line;
forming a first insulating layer over the at least one write line;
forming a heating line on the first insulating layer;
forming at least one tunnel junction above the at least one write line, the at least one tunnel junction connected to the heating line;
forming a second insulating layer on the heating line;
forming heat heating supply vias at each end of the current line;
forming heat current supply lines connected to each heat current supply via; and
forming at least one read line above the at least one tunnel junction and physically connected to the at least one tunnel junction, wherein the at least read line, at least one tunnel junction and at least one write line include a plurality of read lines, tunnel junctions and write lines, respectively, the method further comprising;
forming the heating line to have a larger width between two adjacent tunnel junctions than adjacent to each tunnel junction.
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Abstract
A method of forming a magnetic random access memory (MRAM) device includes forming at least one write line, forming a first insulating layer over the at least one write line and forming a heating line on the first insulating layer. The method includes forming at least one tunnel junction above the at least one write line, the at least one tunnel junction connected to the heating line, forming a second insulating layer on the heating line and forming heat current supply vias at each end of the current line. The method further includes forming heat current supply lines connected to each heat current supply via and forming at least one read line above the at least one tunnel junction and physically connected to the at least one tunnel junction.
55 Citations
9 Claims
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1. A method of forming a magnetic random access memory (MRAM) device, comprising:
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forming at least one write line; forming a first insulating layer over the at least one write line; forming a heating line on the first insulating layer; forming at least one tunnel junction above the at least one write line, the at least one tunnel junction connected to the heating line; forming a second insulating layer on the heating line; forming heat heating supply vias at each end of the current line; forming heat current supply lines connected to each heat current supply via; and forming at least one read line above the at least one tunnel junction and physically connected to the at least one tunnel junction, wherein the at least read line, at least one tunnel junction and at least one write line include a plurality of read lines, tunnel junctions and write lines, respectively, the method further comprising;
forming the heating line to have a larger width between two adjacent tunnel junctions than adjacent to each tunnel junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a magnetic random access memory (MRAM) device, comprising:
- forming at least one write line;
forming a first insulating layer over the at least one write line;
forming a heating line on the first insulating layer;
forming at least one tunnel junction above the at least one write line, the at least one tunnel junction connected to the heating line;
forming a second insulating layer on the heating line;forming heat current supply vias at each end of the heating line; forming heat current supply lines connected to each heat current supply via; and forming at least one read line above the at least one tunnel junction and physically connected to the at least one tunnel junction, wherein the heating line is formed using one first mask and the tunnel junctions and heat current supply vias are formed using one second mask.
- forming at least one write line;
Specification