Semiconductor device with buried electrode
First Claim
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1. A method of manufacturing a semiconductor device, comprising:
- forming a cavity within a semiconductor substrate;
forming an active device region at a surface of an epitaxial layer disposed on the semiconductor substrate directly over the cavity such that the cavity is spaced apart from the active device region by a portion of the epitaxial layer in a direction perpendicular to the surface; and
forming a buried electrode directly underneath the active device region in the cavity and in low ohmic or Schottky contact with the semiconductor substrate, the buried electrode comprising an electrically conductive material different than the material of the semiconductor substrate.
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Abstract
A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.
38 Citations
14 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming a cavity within a semiconductor substrate; forming an active device region at a surface of an epitaxial layer disposed on the semiconductor substrate directly over the cavity such that the cavity is spaced apart from the active device region by a portion of the epitaxial layer in a direction perpendicular to the surface; and forming a buried electrode directly underneath the active device region in the cavity and in low ohmic or Schottky contact with the semiconductor substrate, the buried electrode comprising an electrically conductive material different than the material of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification