Integrated circuit

• US 9,287,414 B2
• Filed: 10/21/2010
• Issued: 03/15/2016
• Est. Priority Date: 10/22/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Vellianitis, Georgios, Curatola, Gilberto, Fotopoulou, Kyriaki, Akil, Nader
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): HILLMAN, DAMON A
• Application Number:
  US13/499,805
• Publication Number:
  US 20120199937A1
• Time in Patent Office: 1,972 Days
• Field of Search: 257/471
• US Class Current: 1/1
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/083 Anode or cathode regions of thyristors or gated bipolar-mode devices
• CPC Class Codes: H01L 29/66143 Schottky diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

An integrated circuit including a Schottky diode, and a method of making the same. The diode includes an active region bordered by an isolation region in a semiconductor substrate of the integrated circuits, a first electrode having a metal contact provided on a surface of the active region, and a second electrode having a silicide contact also provided on the surface of the active region.

Claims

1. An integrated circuit including a Schottky diode, the diode comprising:

an active region bordered by an isolation region in a semiconductor substrate of the integrated circuit, wherein a portion of the surface of the active region is covered by a protection layer;

a first electrode comprising a first metal contact directly in contact with a surface of the active region such that an intervening silicide contact is not connected between the first metal contact and the active region, wherein the first metal contact extends through the protection layer to meet the surface of the active region; and

a second electrode comprising a second metal contact and a silicide contact in direct contact therewith, the silicide contact of the second electrode being in direct contact with the surface of the active region, wherein the silicide contact is provided on an exposed portion of the surface of the active region not covered by the protection layer.

2. The integrated circuit of claim 1, wherein the isolation region comprises shallow trench isolation.

3. The integrated circuit of claim 1, wherein the active region comprises a doped well, and wherein the first and second electrodes are provided on the surface of the active region above the doped well.

4. The integrated circuit of claim 1, comprising a portion of semiconductor material located in the active region and adjacent the edges of the metal contact of the first electrode, for reducing leakage current at said edges, wherein the portion of semiconductor material is doped to have a conductivity type opposite to that of the remainder of the active region.

5. The integrated circuit of claim 4, wherein portion of semiconductor material adjacent the edges of the first metal contact of the first electrode forms a closed ring around the first metal contact.

6. The integrated circuit of claim 1, wherein the first metal contact of the first electrode comprises a portion of an interconnect level of the substrate.

7. The integrated circuit of claim 6, wherein the interconnect level is a local interconnect level of the substrate.

8. The integrated circuit of claim 6, wherein the interconnect level is a lowest metal interconnect level (M1) of the substrate.

9. An RFID tag including the integrated circuit of claim 1.

10. A method of making an integrated circuit including a Schottky diode, the method comprising:

providing a semiconductor substrate;

providing an isolation region in the substrate, wherein the isolation borders an active region of the substrate;

covering a portion of the surface of the active region with a protection layer;

forming a first metal contact directly in contact with a surface of the active region to provide a first electrode of the diode, wherein the first metal contact extends through the protection layer to meet the surface of the active region without an intervening silicide contact being positioned therebetween;

forming a silicide contact on said surface of said active region, wherein the silicide contact is formed on an exposed portion of the surface of the active region not covered by the protective layer of semiconductor material; and

forming a second metal contact directly in contact with the silicide contact to provide a second electrode of the diode.

11. The method of claim 10, comprising:

forming a portion of semiconductor material in the active region corresponding to an intended configuration of the first metal contact of the first electrode, wherein the portion of semiconductor material is has a conductivity type opposite to that of the remainder of the active region; and

forming said first metal contact such that the portion of semiconductor material is positioned adjacent the edges of the metal contact, for reducing leakage current at said edges.

12. The method of claim 10, comprising forming an interconnect level of the substrate, wherein the first metal contact of the first electrode is formed during the same processing step as the formation of the interconnect level.

13. The method of claim 12, wherein the interconnect level is a local interconnect level of the substrate.

14. The method of claim 12, wherein the interconnect level is a lowest metal interconnect level (M1) of the substrate.

15. A method for making an RFID tag, the method including the method of making an integrated circuit including a Schottky diode for making an integrated circuit of the RFID tag, the method comprising:

providing a semiconductor substrate;

providing an isolation region in the substrate, wherein the isolation borders an active region of the substrate;

covering a portion of the surface of the active region with a protection layer;

forming a first metal contact directly in contact with a surface of the active region to provide a first electrode of the diode, wherein the metal contact extends through the protection layer to meet the surface of the active region without an intervening silicide contact being positioned between the first metal contact and the active region;

forming a silicide contact on said surface of said active region, wherein the silicide contact is formed on an exposed portion of the surface of the active region not covered by the protective layer of semiconductor material; and

forming a second metal contact directly in contact with the silicide contact to provide a second electrode of the diode.

16. The method of claim 15, comprising:

forming a portion of semiconductor material in the active region corresponding to an intended configuration of the first metal contact of the first electrode, wherein the portion of semiconductor material is has a conductivity type opposite to that of the remainder of the active region; and

forming said first metal contact such that the portion of semiconductor material is positioned adjacent the edges of the metal contact, for reducing leakage current at said edges.

17. The method of claim 15, comprising forming an interconnect level of the substrate, wherein the first metal contact of the first electrode is formed during the same processing step as the formation of the interconnect level.