Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor film on an insulating surface, the oxide semiconductor film including a first region, a second region, and a third region;
a gate insulating film over the oxide semiconductor film;
a gate electrode over the gate insulating film, the gate electrode overlapping with the first region;
a first electrode electrically connected to the second region; and
a second electrode electrically connected to the third region,wherein the first region is interposed between the second region and the third region,wherein, in the first region, c-axes of crystals are aligned substantially perpendicularly to the insulating surface throughout a thickness of the oxide semiconductor film;
wherein each of the second region and the third region is added with an impurity element and comprises a first portion in contact with the insulating surface and a second portion over the first portion,wherein the second portion has a polycrystalline oxide semiconductor, andwherein, in the second portion, c-axes of crystals are aligned substantially perpendicularly to the insulating surface.
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Abstract
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
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4 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film on an insulating surface, the oxide semiconductor film including a first region, a second region, and a third region; a gate insulating film over the oxide semiconductor film; a gate electrode over the gate insulating film, the gate electrode overlapping with the first region; a first electrode electrically connected to the second region; and a second electrode electrically connected to the third region, wherein the first region is interposed between the second region and the third region, wherein, in the first region, c-axes of crystals are aligned substantially perpendicularly to the insulating surface throughout a thickness of the oxide semiconductor film; wherein each of the second region and the third region is added with an impurity element and comprises a first portion in contact with the insulating surface and a second portion over the first portion, wherein the second portion has a polycrystalline oxide semiconductor, and wherein, in the second portion, c-axes of crystals are aligned substantially perpendicularly to the insulating surface. - View Dependent Claims (2, 3, 4)
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Specification